Cree/Wolfspeed Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreCree/Wolfspeed
Record 39
Pagina 2/2
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Cree/Wolfspeed |
1200V, 21 MOHM, G3 SIC MOSFET |
6.174 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Cree/Wolfspeed |
MOSFET N-CH 1700V 5.3A TO247 |
3.436 |
|
C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | +25V, -10V | 200pF @ 1000V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|
Cree/Wolfspeed |
MOSFET N-CH 900V 35A D2PAK-7 |
5.796 |
|
C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30nC @ 15V | +19V, -8V | 660pF @ 600V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|
Cree/Wolfspeed |
1000V, 65 MOHM, G3 SIC MOSFET |
6.372 |
|
C3M™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1000V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | +15V, -4V | 660pF @ 600V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|
|
Cree/Wolfspeed |
1200V, 75 MOHM, G3 SIC MOSFET ON |
7.812 |
|
C3M™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | +15V, -4V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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|
|
Cree/Wolfspeed |
MOSFET N-CH 1200V 42A TO-247-3 |
7.776 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 42A (Tc) | 20V | 110mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | +25V, -5V | 1915pF @ 800V | - | 215W (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 24A TO247 |
5.346 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 24A (Tc) | 20V | 220mOhm @ 10A, 20V | 4V @ 500µA | 47.1nC @ 20V | +25V, -5V | 928pF @ 800V | - | 134W (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CHANNEL 1200V 50A DIE |
8.046 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 50A (Tj) | 20V | 110mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | +25V, -5V | 1915pF @ 800V | - | 313mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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|
Cree/Wolfspeed |
MOSFET N-CHANNEL 1200V 28A DIE |
2.052 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 28A (Tj) | 20V | 220mOhm @ 10A, 20V | 4V @ 1mA | 47.1nC @ 20V | +25V, -5V | 928pF @ 800V | - | 202W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |