Toshiba Semiconductor and Storage Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreToshiba Semiconductor and Storage
Record 786
Pagina 26/27
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A S-MINI |
6.444 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | - | - | ±20V | 17pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
|
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A 5DFN |
4.374 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 104W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A 5DFN |
4.644 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | Super Junction | 139W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 46A TO-220 |
3.582 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 46A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | ±20V | 2500pF @ 40V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 6A VS-8 |
5.004 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | +20V, -25V | 970pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A TO-220AB |
8.064 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | ±30V | 1800pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15.8A TO-220AB |
3.436 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | ±30V | 1350pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM |
6.336 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
8.640 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
7.974 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
8.622 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
4.644 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
3.024 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
4.824 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
5.364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET P-CH |
6.264 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
4.950 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
3.096 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
2.412 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
7.650 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
6.660 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
5.670 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
6.948 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
5.778 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
2.862 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
5.688 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
8.838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
4.986 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
5.076 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
|
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Toshiba Semiconductor and Storage |
MOSFET N-CH |
5.796 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |