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Infineon Technologies Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 3/24
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
IDFW40E65D1EXKSA1
Infineon Technologies
IGBT 650V 40A TO247-3
8.256
-
Standard
650V
42A (DC)
2.1V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
76ns
40µA @ 650V
-
Through Hole
TO-247-3
PG-TO247-3-AI
-40°C ~ 175°C
IDWD10G120C5XKSA1
Infineon Technologies
SIC SCHOTTKY 1200V 10A TO247-2
6.792
CoolSiC™+
Silicon Carbide Schottky
1200V
34A (DC)
1.65V @ 10A
No Recovery Time > 500mA (Io)
0ns
80µA @ 1200V
730pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
IDWD15G120C5XKSA1
Infineon Technologies
SIC SCHOTTKY 1200V 15A TO247-2
8.472
CoolSiC™+
Silicon Carbide Schottky
1200V
49A (DC)
1.65V @ 15A
No Recovery Time > 500mA (Io)
0ns
124µA @ 1200V
1050pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
AIDW10S65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO247
7.992
Automotive, AEC-Q100/101, CoolSiC™
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
60µA @ 650V
303pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
IDWD20G120C5XKSA1
Infineon Technologies
SIC SCHOTTKY 1200V 20A TO247-2
8.568
CoolSiC™+
Silicon Carbide Schottky
1200V
62A (DC)
1.65V @ 20A
No Recovery Time > 500mA (Io)
0ns
166µA @ 1200V
1368pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
AIDW12S65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 12A TO247
8.406
Automotive, AEC-Q100/101, CoolSiC™
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
70µA @ 650V
363pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
IDWD30G120C5XKSA1
Infineon Technologies
SIC SCHOTTKY 1200V 30A TO247-2
6.240
CoolSiC™+
Silicon Carbide Schottky
1200V
87A (DC)
1.65V @ 30A
No Recovery Time > 500mA (Io)
0ns
248µA @ 1200V
1980pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
AIDW16S65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO247
8.082
Automotive, AEC-Q100/101, CoolSiC™
Silicon Carbide Schottky
650V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
90µA @ 650V
471pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
AIDW20S65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO247
7.680
Automotive, AEC-Q100/101, CoolSiC™
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
120µA @ 650V
584pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
IDWD40G120C5XKSA1
Infineon Technologies
SIC SCHOTTKY 1200V 40A TO247-2
7.692
CoolSiC™+
Silicon Carbide Schottky
1200V
110A (DC)
1.65V @ 40A
No Recovery Time > 500mA (Io)
0ns
332µA @ 1200V
2592pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
AIDW30S65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 30A TO247
6.204
Automotive, AEC-Q100/101, CoolSiC™
Silicon Carbide Schottky
650V
30A (DC)
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
120µA @ 650V
860pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
AIDW40S65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 40A TO247
8.172
Automotive, AEC-Q100/101, CoolSiC™
Silicon Carbide Schottky
650V
40A (DC)
1.7V @ 40A
No Recovery Time > 500mA (Io)
0ns
120µA @ 650V
1138pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
BAW78DH6327XTSA1
Infineon Technologies
DIODE GP 400V 1A SOT89
44.904
Automotive, AEC-Q101
Standard
400V
1A (DC)
1.6V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1µs
1µA @ 400V
10pF @ 0V, 1MHz
Surface Mount
TO-243AA
PG-SOT89
150°C (Max)
BAS3010S02LRHE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 30V 1A TSLP-2
8.262
-
Schottky
30V
1A
650mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 30V
15pF @ 5V, 1MHz
Surface Mount
SOD-882
PG-TSLP-2
-55°C ~ 150°C
BAT1502ELE6327XTMA1
Infineon Technologies
DIODE SCHOTTKY 4V 110MA TSLP-2
6.876
-
Schottky
4V
110mA (DC)
410mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 1V
350pF @ 0V, 1MHz
Surface Mount
2-XDFN
PG-TSLP-2-19
-55°C ~ 150°C
IDM08G120C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 1200V 8A TO252-2
5.976
CoolSiC™+
Silicon Carbide Schottky
1200V
8A (DC)
1.95V @ 8A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1200V
365pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
IDM10G120C5XTMA1
Infineon Technologies
DIODE SCHTKY 1200V 38A PGTO252-2
7.254
CoolSiC™+
Silicon Carbide Schottky
1200V
38A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
62µA @ 12V
29pF @ 800V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 150°C
IDP30E65D1XKSA1
Infineon Technologies
DIODE GEN PURP 650V 60A TO220-2
8.604
-
Standard
650V
60A (DC)
1.7V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
64ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
IDP30E120XKSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 50A TO220-2
7.932
-
Standard
1200V
50A (DC)
2.15V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
243ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
IDP08E65D1XKSA1
Infineon Technologies
DIODE GEN PURP 650V 8A TO220-2
15.888
-
Standard
650V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDP15E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 15A TO220
21.528
-
Standard
650V
15A
2.3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
47ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220
-40°C ~ 175°C
IDH03G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 3A TO220-2-1
11.388
CoolSiC™+
Silicon Carbide Schottky
650V
3A (DC)
1.7V @ 3A
No Recovery Time > 500mA (Io)
0ns
50µA @ 650V
100pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDP45E60XKSA1
Infineon Technologies
DIODE GEN PURP 600V 71A TO220-2
9.396
-
Standard
600V
71A (DC)
2V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDW40E65D2FKSA1
Infineon Technologies
DIODE GEN PURP 650V 80A TO247-3
8.262
-
Standard
650V
80A
2.3V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
40µA @ 650V
-
Through Hole
TO-247-3
TO-247-3
-40°C ~ 175°C
DZ600N18KHPSA1
Infineon Technologies
DIODE MODULE 1800V 600A
4.122
*
-
-
-
-
-
-
-
-
Chassis Mount
Module
Module
-
IDP15E65D1XKSA1
Infineon Technologies
DIODE GEN PURP 650V 15A TO220-2
7.704
-
Standard
650V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
114ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDP08E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 8A TO220-2
10.032
-
Standard
650V
8A
2.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDH06G65C6XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO220-2
5.688
-
Silicon Carbide Schottky
650V
16A (DC)
1.35V @ 6A
No Recovery Time > 500mA (Io)
0ns
20µA @ 420V
302pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDW15E65D2FKSA1
Infineon Technologies
DIODE GEN PURP 650V 30A TO247-3
9.312
-
Standard
650V
30A
2.3V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
47ns
40µA @ 650V
-
Through Hole
TO-247-3
PG-TO247-3
-40°C ~ 175°C
IDW40E65D1FKSA1
Infineon Technologies
DIODE GEN PURP 650V 80A TO247-3
7.272
-
Standard
650V
80A
1.7V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
129ns
40µA @ 650V
-
Through Hole
TO-247-3
TO-247-3
-40°C ~ 175°C