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Infineon Technologies Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 2/24
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
IDH04G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 4A TO220-2-1
57.618
CoolSiC™+
Silicon Carbide Schottky
650V
4A (DC)
1.7V @ 4A
No Recovery Time > 500mA (Io)
0ns
70µA @ 650V
130pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDP40E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 40A TO220-2
13.722
-
Standard
650V
40A
2.3V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
HFA15PB60PBF
Infineon Technologies
DIODE GEN PURP 600V 15A TO247AC
23.856
HEXFRED®
Standard
600V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
IDH06G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO220-2-1
20.664
CoolSiC™+
Silicon Carbide Schottky
650V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
110µA @ 650V
190pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH08G65C6XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO220-2
7.896
-
Silicon Carbide Schottky
650V
20A (DC)
1.35V @ 8A
No Recovery Time > 500mA (Io)
0ns
27µA @ 420V
401pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH08G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 8A TO220-2-1
9.684
CoolSiC™+
Silicon Carbide Schottky
650V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
140µA @ 650V
250pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDW75D65D1XKSA1
Infineon Technologies
DIODE GEN PURP 650V 150A TO247-3
17.004
-
Standard
650V
150A (DC)
1.7V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
108ns
40µA @ 650V
-
Through Hole
TO-247-3
PG-TO247-3
-40°C ~ 175°C
IDW100E60FKSA1
Infineon Technologies
DIODE GEN PURP 600V 150A TO247-3
8.076
-
Standard
600V
150A (DC)
2V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
40µA @ 600V
-
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDH12G65C5XKSA2
Infineon Technologies
DIODE SCHOTKY 650V 12A TO220-2-1
12.252
CoolSiC™+
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDW12G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 12A TO247-3
214
CoolSiC™+
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDH16G65C6XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 34A TO220-2
307
-
Silicon Carbide Schottky
650V
34A (DC)
1.35V @ 16A
No Recovery Time > 500mA (Io)
0ns
53µA @ 420V
783pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH10G120C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 10A TO220-2
7.428
CoolSiC™+
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
62µA @ 1200V
525pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH16G65C5XKSA2
Infineon Technologies
DIODE SCHOTKY 650V 16A TO220-2-1
23.940
CoolSiC™+
Silicon Carbide Schottky
650V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
200µA @ 650V
470pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH20G120C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 1.2KV 56A TO220-2
14.610
CoolSiC™+
Silicon Carbide Schottky
1200V
56A (DC)
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
123µA @ 1200V
1050pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDW30G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 30A TO247-3
63
CoolSiC™+
Silicon Carbide Schottky
650V
30A (DC)
1.7V @ 30A
No Recovery Time > 500mA (Io)
0ns
220µA @ 650V
860pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDW40G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 40A TO247-3
6.930
CoolSiC™+
Silicon Carbide Schottky
650V
40A (DC)
1.7V @ 40A
No Recovery Time > 500mA (Io)
0ns
220µA @ 650V
1140pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
SMBD914E6327HTSA1
Infineon Technologies
DIODE GEN PURP 100V 250MA SOT23
597.582
-
Standard
100V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
150°C (Max)
BAS1602VH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 200MA SC79-2
288.678
-
Standard
80V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
IDH02G120C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 2A TO220-2
24.138
CoolSiC™+
Silicon Carbide Schottky
1200V
2A (DC)
1.65V @ 2A
No Recovery Time > 500mA (Io)
0ns
18µA @ 1200V
182pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
175°C (Max)
IDW75E60FKSA1
Infineon Technologies
DIODE GEN PURP 600V 120A TO247-3
7.524
-
Standard
600V
120A (DC)
2V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
121ns
40µA @ 600V
-
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDW10G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO247-3
252
CoolSiC™+
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 650V
300pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDW16G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO247-3
8.928
CoolSiC™+
Silicon Carbide Schottky
650V
16A (DC)
1.7V @ 16A
No Recovery Time > 500mA (Io)
0ns
200µA @ 650V
470pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
IDH16G120C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 16A TO220-2
8.868
CoolSiC™+
Silicon Carbide Schottky
1200V
16A (DC)
1.95V @ 16A
No Recovery Time > 500mA (Io)
0ns
50µA @ 1200V
730pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDW20G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO247-3
8.136
CoolSiC™+
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
210µA @ 650V
590pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-55°C ~ 175°C
IDH09G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 9A TO220-2-1
17.988
CoolSiC™+
Silicon Carbide Schottky
650V
9A (DC)
1.7V @ 9A
No Recovery Time > 500mA (Io)
0ns
160µA @ 650V
270pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH08G120C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 8A TO220-2
8.328
CoolSiC™+
Silicon Carbide Schottky
1200V
8A (DC)
1.95V @ 8A
No Recovery Time > 500mA (Io)
0ns
40µA @ 1200V
365pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDH20G65C5XKSA2
Infineon Technologies
DIODE SCHOTKY 650V 20A TO220-2-1
10.176
CoolSiC™+
Silicon Carbide Schottky
650V
20A (DC)
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
210µA @ 650V
590pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
BAT5402VH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SC79-2
208.410
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
IDH10G65C6XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 24A TO220-2
1.404
-
Silicon Carbide Schottky
650V
24A (DC)
1.35V @ 10A
No Recovery Time > 500mA (Io)
0ns
33µA @ 420V
495pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDH12G65C6XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 27A TO220-2
2.462
-
Silicon Carbide Schottky
650V
27A (DC)
1.35V @ 12A
No Recovery Time > 500mA (Io)
0ns
40µA @ 420V
594pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C