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EPC Transistor - FET, MOSFET - Array

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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
ProduttoreEPC
Record 27
Pagina 1/1
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo FET
Funzione FET
Tensione Drain to Source (Vdss)
Corrente - Scarico continuo (Id) @ 25 ° C
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Capacità di ingresso (Ciss) (Max) @ Vds
Potenza - Max
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
EPC2106
EPC
GANFET TRANS SYM 100V BUMPED DIE
78.744
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
100V
1.7A
70mOhm @ 2A, 5V
2.5V @ 600µA
0.73nC @ 5V
75pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2104
EPC
GAN TRANS SYMMETRICAL HALF BRIDG
78.798
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
100V
23A
6.3mOhm @ 20A, 5V
2.5V @ 5.5mA
7nC @ 5V
800pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2111
EPC
GAN TRANS ASYMMETRICAL HALF BRID
3.137
-
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
30V
16A (Ta)
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
2.5V @ 5mA
2.2nC @ 5V, 5.7nC @ 5V
230pF @ 15V, 590pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2102
EPC
GAN TRANS SYMMETRICAL HALF BRIDG
87.732
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
60V
23A
4.4mOhm @ 20A, 5V
2.5V @ 7mA
6.8nC @ 5V
830pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2103
EPC
GAN TRANS SYMMETRICAL HALF BRIDG
78.552
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
80V
28A
5.5mOhm @ 20A, 5V
2.5V @ 7mA
6.5nC @ 5V
760pF @ 40V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2103ENGRT
EPC
GANFET TRANS SYM HALF BRDG 80V
45.828
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
80V
23A
5.5mOhm @ 20A, 5V
2.5V @ 7mA
6.5nC @ 5V
7600pF @ 40V
-
-
Surface Mount
Die
Die
EPC2106ENGRT
EPC
GAN TRANS 2N-CH 100V BUMPED DIE
62.904
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
100V
1.7A
70mOhm @ 2A, 5V
2.5V @ 600µA
0.73nC @ 5V
75pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2110ENGRT
EPC
GAN TRANS 2N-CH 120V BUMPED DIE
92.868
eGaN®
2 N-Channel (Dual) Common Source
GaNFET (Gallium Nitride)
120V
3.4A
60mOhm @ 4A, 5V
2.5V @ 700µA
0.8nC @ 5V
80pF @ 60V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2100ENGRT
EPC
GANFET 2 N-CH 30V 9.5A/38A DIE
26.922
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
30V
10A (Ta), 40A (Ta)
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
2.5V @ 4mA, 2.5V @ 16mA
4.9nC @ 15V, 19nC @ 15V
475pF @ 15V, 1960pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2102ENGRT
EPC
GANFET 2 N-CHANNEL 60V 23A DIE
53.898
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
60V
23A (Tj)
4.4mOhm @ 20A, 5V
2.5V @ 7mA
6.8nC @ 5V
830pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2101ENGRT
EPC
GAN TRANS ASYMMETRICAL HALF BRID
35.766
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
60V
9.5A, 38A
11.5mOhm @ 20A, 5V
2.5V @ 2mA
2.7nC @ 5V
300pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2100
EPC
GAN TRANS ASYMMETRICAL HALF BRID
59.664
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
30V
10A (Ta), 40A (Ta)
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
2.5V @ 4mA, 2.5V @ 16mA
4.9nC @ 15V, 19nC @ 15V
475pF @ 15V, 1960pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2101
EPC
GAN TRANS ASYMMETRICAL HALF BRID
98.832
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
60V
9.5A, 38A
11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
2.5V @ 3mA, 2.5V @ 12mA
2.7nC @ 5V, 12nC @ 5V
300pF @ 30V, 1200pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2105
EPC
GAN TRANS ASYMMETRICAL HALF BRID
100.422
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
80V
9.5A, 38A
14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
2.5V @ 2.5mA, 2.5V @ 10mA
2.5nC @ 5V, 10nC @ 5V
300pF @ 40V, 1100pF @ 40V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2108
EPC
GANFET 3 N-CH 60V/100V 9BGA
23.286
eGaN®
3 N-Channel (Half Bridge + Synchronous Bootstrap)
GaNFET (Gallium Nitride)
60V, 100V
1.7A, 500mA
190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
2.5V @ 100µA, 2.5V @ 20µA
0.22nC @ 5V, 0.044nC @ 5V
22pF @ 30V, 7pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
9-VFBGA
9-BGA (1.35x1.35)
EPC2107
EPC
GANFET 3 N-CH 100V 9BGA
36.030
eGaN®
3 N-Channel (Half Bridge + Synchronous Bootstrap)
GaNFET (Gallium Nitride)
100V
1.7A, 500mA
320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
2.5V @ 100µA, 2.5V @ 20µA
0.16nC @ 5V, 0.044nC @ 5V
16pF @ 50V, 7pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
9-VFBGA
9-BGA (1.35x1.35)
EPC2110
EPC
GANFET 2NCH 120V 3.4A DIE
4.680
eGaN®
2 N-Channel (Dual) Common Source
GaNFET (Gallium Nitride)
120V
3.4A
60mOhm @ 4A, 5V
2.5V @ 700µA
0.8nC @ 5V
80pF @ 60V
-
-40°C ~ 150°C (TJ)
-
Die
Die
EPC2104ENGRT
EPC
GANFET 2NCH 100V 23A DIE
16.584
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
100V
23A
6.3mOhm @ 20A, 5V
2.5V @ 5.5mA
7nC @ 5V
800pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2105ENGRT
EPC
GANFET 2NCH 80V 9.5A DIE
5.076
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
80V
9.5A
14.5mOhm @ 20A, 5V
2.5V @ 2.5mA
2.5nC @ 5V
300pF @ 40V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2111ENGRT
EPC
GAN TRANS ASYMMETRICAL HALF BRID
2.430
-
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
30V
16A (Ta)
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
2.5V @ 5mA
2.2nC @ 5V, 5.7nC @ 5V
230pF @ 15V, 590pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2107ENGRT
EPC
GAN TRANS 3N-CH 100V BUMPED DIE
4.140
eGaN®
3 N-Channel (Half Bridge + Synchronous Bootstrap)
GaNFET (Gallium Nitride)
100V
1.7A, 500mA
320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
2.5V @ 100µA, 2.5V @ 20µA
0.16nC @ 5V, 0.044nC @ 5V
16pF @ 50V, 7pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
9-VFBGA
9-BGA (1.35x1.35)
EPC2100ENG
EPC
GAN TRANS 2N-CH 30V BUMPED DIE
2.502
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
30V
10A (Ta), 40A (Ta)
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
2.5V @ 4mA, 2.5V @ 16mA
4.9nC @ 15V, 19nC @ 15V
475pF @ 15V, 1960pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2101ENG
EPC
GAN TRANS 2N-CH 60V BUMPED DIE
3.384
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
60V
9.5A, 38A
11.5mOhm @ 20A, 5V
2.5V @ 2mA
2.7nC @ 5V
300pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2102ENG
EPC
GAN TRANS 2N-CH 60V BUMPED DIE
6.804
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
60V
23A
4.4mOhm @ 20A, 5V
2.5V @ 7mA
6.8nC @ 5V
830pF @ 30V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2103ENG
EPC
GAN TRANS 2N-CH 80V BUMPED DIE
5.076
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
80V
23A
5.5mOhm @ 20A, 5V
2.5V @ 7mA
6.5nC @ 5V
760pF @ 40V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2104ENG
EPC
GAN TRANS 2N-CH 100V BUMPED DIE
3.744
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
100V
23A
6.3mOhm @ 20A, 5V
2.5V @ 5.5mA
7nC @ 5V
800pF @ 50V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2105ENG
EPC
GAN TRANS 2N-CH 80V BUMPED DIE
5.796
eGaN®
2 N-Channel (Half Bridge)
GaNFET (Gallium Nitride)
80V
9.5A, 38A
14.5mOhm @ 20A, 5V
2.5V @ 2.5mA
2.5nC @ 5V
300pF @ 40V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die