SQD10N30-330H_GE3 Datasheet
SQD10N30-330H_GE3 Datasheet
Totale pagine: 10
Dimensioni: 203,92 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SQD10N30-330H_GE3
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Produttore Vishay Siliconix Serie Automotive, AEC-Q101, TrenchFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 300V Corrente - Scarico continuo (Id) @ 25 ° C 10A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 330mOhm @ 14A, 10V Vgs (th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 2190pF @ 25V Funzione FET - Dissipazione di potenza (max) 107W (Tc) Temperatura di esercizio -55°C ~ 175°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore TO-252AA Pacchetto / Custodia TO-252-3, DPak (2 Leads + Tab), SC-63 |