Renesas releases its first embedded flash memory technology

     Renesas Electronics, Inc., a leading global supplier of advanced semiconductors and solutions, has announced the development of the industry's first 40nm process embedded flash memory technology for automotive real-time applications. Renesas will also be the first to introduce 40nm embedded flash microcontrollers (MCUS) for automotive applications using the 40nm process flash technology, with the first products using the technology expected to be available in fall 2012.

     Renesas Electronics has extensive experience in developing high quality and reliable flash memory MONOS (metallic silicon nitride) technology. In 2007, Renesas Electronics became the first manufacturer to launch a 90nm flash MCU for automotive use.

     Renesas Flash Memory MONOS technology is scalable technology with high reliability and high performance. The evaluation results of the 40nm flash memory test assembly have demonstrated successful performance in three important parameters: data retention, program/erase cycle tolerance, and program design time. The 40nm process node integrates a variety of safety-related functionality and communication interfaces.

     Renesas 40nm flash IP guarantees data retention for 20 years and can be read at binding temperatures up to 170 ° C. In addition, program code flash supports 120 MHz read speeds, while data flash achieves an industry-leading 20-year data retention time even after 125,000 program/erase cycles.