Infineon introduces the second generation of CoolSiC MOSFETs, setting new standards in power electronics

     In today's society highly dependent on electricity, power loss has become a key factor that cannot be ignored in the field of power electronics. In response to industry demand for more efficient and reliable power processing solutions, Infineon Technologies AG has introduced its new silicon Carbide CoolSiC MOSFET G2 trench technology. This technology sets a new standard for power transmission efficiency in AC/DC, DC/DC, DC/AC power supply solutions and leads the development of power electronics.

     Compared to traditional silicon power devices, CoolSiC MOSFET G2 shows significant advantages in hard and soft switching operation. Its key quality factor is improved by more than 20% compared to the previous generation G1, allowing it to convert electricity with greater efficiency under the same conditions. In addition, the fast switching capability of SiC MOSFETs has also been improved by more than 30%, further enhancing its performance in a variety of applications. These advantages enable G2 to achieve low power loss in a variety of operating modes such as photovoltaic inverters, energy storage devices, EV charging, and UPS, providing strong support for energy saving per watt in field processing.

     It is worth mentioning that Infineon is unique. XT interconnect technology also plays an important role in this. The technology helps improve the performance of semiconductor chips while maintaining thermal performance, thus overcoming common challenges in the field. The new generation improves thermal performance by 12%, bringing the chip's quality factor to a new level of SiC performance. In addition, the CoolSiC G2 MOSFET portfolio achieves the lowest on-resistance (Rdson) in the SiC MOSFET market, further improving energy efficiency and power density, and reducing part count.

     In addition to superior performance, CoolSiC MOSFET G2 also improves reliability to ensure optimal performance in long-term field operations. The 1200V portfolio reliably operates at 150 °C and has overload operation capabilities up to 200°C virtual junction temperature, allowing system designers to respond more flexibly to challenges such as grid fluctuations while reducing cooling efforts and simplifying system design.

     The launch of Infineon Technologies AG's CoolSiC MOSFET G2 technology opens a new chapter in power systems and energy conversion. The technology not only improves overall energy efficiency and further promotes decarbonization, but also brings great advantages to customers in various power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. Compared to previous generations, electric vehicle DC fast charging stations equipped with CoolSiC G2 can reduce power loss by up to 10% while achieving higher charging capacity without compromising form factor. Traction inverters based on CoolSiC G2 devices can further increase the range of electric vehicles. In the renewable energy sector, solar inverters designed with CoolSiC G2 can be reduced in size while maintaining high power output, resulting in lower cost per watt.

     Dr Peter Wawer, President of Infineon's Green Industrial Power Division, said: "Megacrends require new and efficient ways to generate, transmit and consume energy. With CoolSiC MOSFET G2, Infineon takes silicon carbide performance to a new level. This new generation of SiC technology accelerates the design of more cost-effective, compact, reliable and efficient systems that save energy and reduce CO2 emissions per watt installed on-site."

     Infineon's leading CoolSiC MOSFET trench technology combines award-winning. The XT packaging technology further enhances the design potential based on CoolSiC G2 with higher thermal conductivity, better assembly control and higher performance. In addition, Infineon holds all relevant power technologies in the fields of silicon, silicon carbide and gallium nitride (GaN), providing design flexibility and leading application expertise to meet the expectations and needs of modern designers. Innovative semiconductors based on wide-band gap (WBG) materials such as SiC and GaN are key to the conscious and efficient use of energy to promote decarbonization.