Transistor - FET, MOSFET - Singolo

Produttore

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Serie

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Tipo FET

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Tecnologia

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Tensione Drain to Source (Vdss)

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Corrente - Scarico continuo (Id) @ 25 ° C

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Tensione inverter (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs (th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (massimo)

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Capacità di ingresso (Ciss) (Max) @ Vds

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Funzione FET

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Dissipazione di potenza (max)

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Temperatura di esercizio

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Tipo di montaggio

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Pacchetto dispositivo fornitore

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Pacchetto / Custodia

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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo

Record 29.970

Pagina 984/999

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo FET	Tecnologia	Tensione Drain to Source (Vdss)	Corrente - Scarico continuo (Id) @ 25 ° C	Tensione inverter (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (massimo)	Capacità di ingresso (Ciss) (Max) @ Vds	Funzione FET	Dissipazione di potenza (max)	Temperatura di esercizio	Tipo di montaggio	Pacchetto dispositivo fornitore	Pacchetto / Custodia
UPA2396T1P-E1-A	Renesas Electronics America	TRANSISTOR	3.942	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2706GR-E1-A	Renesas Electronics America	TRANSISTOR	3.294	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2714GR(0)-E1-A	Renesas Electronics America	TRANSISTOR	6.426	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2752GR(1)-E1-A	Renesas Electronics America	TRANSISTOR	3.186	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2752GR-E1-AT	Renesas Electronics America	TRANSISTOR	3.942	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2754GR(0)-E1-AY	Renesas Electronics America	TRANSISTOR	3.438	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2770GR(0)-E1-AY	Renesas Electronics America	TRANSISTOR	2.070	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2782GR-E1-A	Renesas Electronics America	TRANSISTOR	5.544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2792GR(0)-E1-AZ	Renesas Electronics America	TRANSISTOR	8.928	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2793GR(0)-E2-AY	Renesas Electronics America	TRANSISTOR	4.230	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2793GR(01)-E2-AY	Renesas Electronics America	TRANSISTOR	6.066	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2794GR(0)-E1-AZ	Renesas Electronics America	TRANSISTOR	2.934	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CTLDM7002A-M621 BK	Central Semiconductor Corp	MOSFET N-CH 60V DFN6	3.042	-	N-Channel	MOSFET (Metal Oxide)	60V	280mA (Ta)	5V, 10V	2Ohm @ 500mA, 10V	2.5V @ 250µA	0.592nC @ 4.5V	40V	50pF @ 25V	-	900mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621	6-PowerVFDFN
CTLDM7002A-M621 TR	Central Semiconductor Corp	MOSFET N-CH 60V DFN6	6.444	-	N-Channel	MOSFET (Metal Oxide)	60V	280mA (Ta)	5V, 10V	2Ohm @ 500mA, 10V	2.5V @ 250µA	0.592nC @ 4.5V	40V	50pF @ 25V	-	900mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621	6-PowerVFDFN
CTLDM7003-M621 BK	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	7.758	-	N-Channel	MOSFET (Metal Oxide)	50V	280mA (Ta)	1.8V, 5V	2Ohm @ 50mA, 5V	1V @ 250µA	0.764nC @ 4.5V	12V	50pF @ 25V	-	900mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621	6-PowerVFDFN
CTLDM7003-M621 TR	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	8.874	-	N-Channel	MOSFET (Metal Oxide)	50V	280mA (Ta)	1.8V, 5V	2Ohm @ 50mA, 5V	1V @ 250µA	0.764nC @ 4.5V	12V	50pF @ 25V	-	900mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621	6-PowerVFDFN
CTLDM7120-M621H BK	Central Semiconductor Corp	MOSFET N-CH 20V DFN6	5.436	-	N-Channel	MOSFET (Metal Oxide)	20V	1A (Ta)	1.5V, 4.5V	100mOhm @ 500mA, 4.5V	1.2V @ 1mA	2.4nC @ 4.5V	8V	220pF @ 10V	-	1.6W (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621H	6-XFDFN Exposed Pad
CTLDM8002A-M621 BK	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	2.484	-	P-Channel	MOSFET (Metal Oxide)	50V	280mA (Ta)	5V, 10V	2.5Ohm @ 500mA, 10V	2.5V @ 250µA	0.72nC @ 4.5V	20V	70pF @ 25V	-	900mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621	6-PowerVFDFN
CTLDM8002A-M621 TR	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	3.276	-	P-Channel	MOSFET (Metal Oxide)	50V	280mA (Ta)	5V, 10V	2.5Ohm @ 500mA, 10V	2.5V @ 250µA	0.72nC @ 4.5V	20V	70pF @ 25V	-	900mW (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621	6-PowerVFDFN
CTLDM8002A-M621H BK	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	3.528	-	P-Channel	MOSFET (Metal Oxide)	50V	280mA (Ta)	5V, 10V	2.5Ohm @ 500mA, 10V	2.5V @ 250µA	0.72nC @ 4.5V	20V	70pF @ 25V	-	1.6W (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621H	6-XFDFN Exposed Pad
CTLDM8002A-M621H TR	Central Semiconductor Corp	MOSFET N-CH 50V DFN6	4.644	-	P-Channel	MOSFET (Metal Oxide)	50V	280mA (Ta)	5V, 10V	2.5Ohm @ 500mA, 10V	2.5V @ 250µA	0.72nC @ 4.5V	20V	70pF @ 25V	-	1.6W (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621H	6-XFDFN Exposed Pad
CTLDM8120-M621H BK	Central Semiconductor Corp	MOSFET P-CH 20V DFN6	6.804	-	P-Channel	MOSFET (Metal Oxide)	20V	950mA (Ta)	1.8V, 4.5V	150mOhm @ 950mA, 4.5V	1V @ 250µA	3.56nC @ 4.5V	8V	200pF @ 16V	-	1.6W (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621H	6-XFDFN Exposed Pad
CTLDM8120-M621H TR	Central Semiconductor Corp	MOSFET P-CH 20V DFN6	4.266	-	P-Channel	MOSFET (Metal Oxide)	20V	950mA (Ta)	1.8V, 4.5V	150mOhm @ 950mA, 4.5V	1V @ 250µA	3.56nC @ 4.5V	8V	200pF @ 16V	-	1.6W (Ta)	-65°C ~ 150°C (TJ)	Surface Mount	TLM621H	6-XFDFN Exposed Pad
TSM1NB60SCT A3	Taiwan Semiconductor Corporation	MOSFET N-CH 600V TO92	8.316	-	N-Channel	MOSFET (Metal Oxide)	600V	500mA (Tc)	10V	10Ohm @ 250mA, 10V	4.5V @ 250µA	6.1nC @ 10V	±30V	138pF @ 25V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TSM4425CS RLG	Taiwan Semiconductor Corporation	MOSFET P-CHANNEL 8SOP	3.060	-	P-Channel	MOSFET (Metal Oxide)	30V	11A (Tc)	4.5V, 10V	12mOhm @ 11A, 10V	3V @ 250µA	64nC @ 10V	±20V	3680pF @ 8V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
TSM1NB60SCT B0	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 500MA TO92	3.024	-	N-Channel	MOSFET (Metal Oxide)	600V	500mA (Tc)	10V	10Ohm @ 250mA, 10V	4.5V @ 250µA	6.1nC @ 10V	±30V	138pF @ 25V	-	2.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
TSM8N70CI C0	Taiwan Semiconductor Corporation	MOSFET N-CH 700V ITO220	2.880	-	N-Channel	MOSFET (Metal Oxide)	700V	8A (Tc)	10V	900mOhm @ 4A, 10V	4V @ 250µA	32nC @ 10V	±30V	2006pF @ 25V	-	40W (Tc)	150°C (TJ)	Through Hole	ITO-220AB	TO-220-3 Full Pack, Isolated Tab
CZDM1003N BK	Central Semiconductor Corp	MOSFET N-CH 100V 3A SOT-223	8.208	-	N-Channel	MOSFET (Metal Oxide)	100V	3A (Ta)	10V	150mOhm @ 2A, 10V	4V @ 250µA	15nC @ 10V	20V	975pF @ 25V	-	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SIA430DJ-T4-GE3	Vishay Siliconix	MOSFET N-CH 20V SC-70-6	2.556	TrenchFET®	N-Channel	MOSFET (Metal Oxide)	20V	12A (Ta), 12A (Tc)	4.5V, 10V	13.5mOhm @ 7A, 10V	3V @ 250µA	18nC @ 10V	±20V	800pF @ 10V	-	3.5W (Ta), 19.2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
SIA444DJT-T4-GE3	Vishay Siliconix	MOSFET N-CH 30V SMD	6.552	TrenchFET®	N-Channel	MOSFET (Metal Oxide)	30V	11A (Ta), 12A (Tc)	4.5V, 10V	17mOhm @ 7.4A, 10V	2.2V @ 250µA	15nC @ 10V	±20V	560pF @ 15V	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6

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