PMIC - Gate driver
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CategoriaSemiconduttori / CI di gestione dell'alimentazione / PMIC - Gate driver
Record 5.436
Pagina 180/182
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Configurazione guidata | Tipo di canale | Numero di driver | Tipo di porta | Tensione - Alimentazione | Tensione logica - VIL, VIH | Corrente - Uscita di picco (Source, Sink) | Tipo di ingresso | High Side Voltage - Max (Bootstrap) | Tempo di salita / discesa (tipico) | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Linear Technology/Analog Devices |
IC POWER MANAGEMENT |
7.506 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4V ~ 6.5V | 3V, 6.5V | 3.2A, 4.5A | Non-Inverting | 42V | 8ns, 7ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-DFN (2x3) |
|
|
|
Maxim Integrated |
IC MOSFET DRIVER HS |
8.820 |
|
- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | - | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 125°C | Surface Mount | SOT-23-6 | SOT-23-6 |
|
|
|
Maxim Integrated |
IC MOSFET DRIVER HS |
2.304 |
|
- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 125°C | Surface Mount | SOT-23-6 | SOT-23-6 |
|
|
|
Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN |
6.804 |
|
Automotive, AEC-Q100 | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 28V | 2V, 4.25V | 2A, 4A | Inverting, Non-Inverting | - | 48ns, 32ns | -40°C ~ 125°C | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
|
|
|
Maxim Integrated |
IC POWER MANAGEMENT |
6.714 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | 0°C ~ 70°C | Surface Mount | Die | Die |
|
|
|
Maxim Integrated |
IC GAN HI FREQ DRIVER 60V 15WLP |
4.068 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.4V, 1.6V | 1A, 5A | TTL | 60V | 5ns, 1ns | -40°C ~ 85°C | Surface Mount | 15-WFBGA, WLBGA | 15-WLP (1.22x2.05) |
|
|
|
Richtek USA Inc. |
IC HALF-BRIDGE GATE DRVR SOP8 |
3.618 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Richtek USA Inc. |
IC HI-SIDE MOSFET SWITCH SOP8 |
3.240 |
|
- | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Richtek USA Inc. |
IC HI-SIDE MOSFET SWITCH SOP8 |
6.120 |
|
- | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Richtek USA Inc. |
IC HALF-BRIDGE GATE DRVR DIP8 |
3.598 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
|
Richtek USA Inc. |
IC HI-SIDE MOSFET SWITCH DIP8 |
5.706 |
|
- | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Richtek USA Inc. |
IC HI-SIDE MOSFET SWITCH DIP8 |
2.304 |
|
- | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Richtek USA Inc. |
IC HALF-BRIDGE GATE DRVR DIP8 |
3.544 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Richtek USA Inc. |
IC HI-SIDE MOSFET SWITCH DIP8 |
6.084 |
|
- | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 13V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Richtek USA Inc. |
IC HI-SIDE MOSFET SWITCH DIP8 |
8.874 |
|
- | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 13V ~ 20V | 0.8V, 2.5V | 300mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
4.122 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
7.794 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
4.050 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
274 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
2.826 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
2.016 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
4.176 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Maxim Integrated |
INTEGRATED CIRCUIT |
2.034 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Powerex Inc. |
PWR MGMT MOSFET/PWR DRIVER |
4.410 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Powerex Inc. |
PWR MGMT MOSFET/PWR DRIVER |
5.346 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Powerex Inc. |
PWR MGMT MOSFET/PWR DRIVER |
5.310 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Linear Technology/Analog Devices |
HI V SYNC N-CH MOSFET DRVR |
3.042 |
|
Automotive, AEC-Q100 | Half-Bridge | Independent | 2 | N-Channel MOSFET | 7.2V ~ 13.5V | 1.85V, 3.25V | 2.5A, 3A | Inverting | 114V | 8ns, 5ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
|
|
|
Linear Technology/Analog Devices |
HI V SYNC N-CH MOSFET DRVR |
5.796 |
|
Automotive, AEC-Q100 | Half-Bridge | Independent | 2 | N-Channel MOSFET | 7.2V ~ 13.5V | 1.85V, 3.25V | 2.5A, 3A | Inverting | 114V | 8ns, 5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
|
|
|
Linear Technology/Analog Devices |
HI V SYNC N-CH MOSFET DRVR |
3.600 |
|
Automotive, AEC-Q100 | Half-Bridge | Independent | 2 | N-Channel MOSFET | 7.2V ~ 13.5V | 1.85V, 3.25V | 2.5A, 3A | Inverting | 114V | 8ns, 5ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
|
|
|
Linear Technology/Analog Devices |
ACTIVE RECTIFIER CNTR W/ REVERSE |
8.514 |
|
- | High-Side | Single | 1 | N-Channel MOSFET | 3V ~ 42V | - | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-DFN (3x2) |