Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 659/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
10.182 |
|
Military, MIL-PRF-19500/286 | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 85A DO203AB |
6.318 |
|
- | Standard | 1200V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 85A DO203AB |
6.732 |
|
- | Standard, Reverse Polarity | 1200V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA AXIAL |
8.784 |
|
Military, MIL-PRF-19500/609 | Standard | 75V | 300mA (DC) | 1.2V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100µA @ 75V | - | Through Hole | D, Axial | D-5D | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA AXIAL |
7.380 |
|
Military, MIL-PRF-19500/609 | Standard | 50V | 300mA (DC) | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 100µA @ 50V | - | Through Hole | D, Axial | D-5D | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 60A TO247AC |
137 |
|
- | Standard | 1000V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A B-MELF |
2.358 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
4.770 |
|
- | Standard, Reverse Polarity | 600V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
|
Semtech |
DIODE GEN PURP 200V 2A AXIAL |
177 |
|
- | Standard | 200V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 200V 2A AXIAL |
5.178 |
|
- | Standard | 200V | 2A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 400V 2A AXIAL |
8.406 |
|
- | Standard | 400V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 400V 2A AXIAL |
5.922 |
|
- | Standard | 400V | 2A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 600V 2A AXIAL |
6.246 |
|
- | Standard | 600V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 600V 2A AXIAL |
3.132 |
|
- | Standard | 600V | 2A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 800V 2A AXIAL |
264 |
|
- | Standard | 800V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 800V 2A AXIAL |
6.858 |
|
- | Standard | 800V | 2A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 500nA @ 800V | 18pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 1KV 2A AXIAL |
5.652 |
|
- | Standard | 1000V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Semtech |
DIODE GEN PURP 1KV 2A AXIAL |
8.568 |
|
- | Standard | 1000V | 2A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 18pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 70V 33MA DO35 |
423 |
|
Military, MIL-PRF-19500/444 | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 70V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 880V 1A AXIAL |
4.356 |
|
- | Standard | 880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
2.736 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 780pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
138 |
|
- | Standard | 600V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1.75A AXIAL |
2.286 |
|
- | Standard | 600V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 2µA @ 600V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
7.632 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A AXIAL |
6.894 |
|
Military, MIL-PRF-19500/411 | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 6A B-MELF |
7.344 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
6.534 |
|
Military, MIL-PRF-19500/424 | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A B-MELF |
6.174 |
|
Military, MIL-PRF-19500/420 | Standard | 400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 85A DO203AB |
4.734 |
|
- | Standard, Reverse Polarity | 100V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A D5A |
7.056 |
|
Military, MIL-PRF-19500/429 | Standard | 1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |