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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1165/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
BY459X-1500,127
NXP
DIODE GEN PURP 1.5KV 12A TO220F
8.766
-
Standard
1500V
12A (DC)
1.3V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
250µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY329-1000,127
NXP
DIODE GEN PURP 1KV 8A TO220AC
2.736
-
Standard
1000V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
1mA @ 800V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY329-1200,127
NXP
DIODE GEN PURP 1.2KV 8A TO220AC
7.272
-
Standard
1200V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
1mA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY329X-1500,127
NXP
DIODE GEN PURP 1.5KV 6A TO220F
4.986
-
Standard
1500V
6A (DC)
1.45V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
230ns
-
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY359X-1500,127
NXP
DIODE GEN PURP 1.5KV 10A TO220F
2.808
-
Standard
1500V
10A (DC)
1.8V @ 20A
Standard Recovery >500ns, > 200mA (Io)
600ns
100µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY459-1500,127
NXP
DIODE GEN PURP 1.5KV 12A TO220AC
6.138
-
Standard
1500V
12A (DC)
1.3V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
-
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY459X-1500S,127
NXP
DIODE GEN PURP 1.5KV 10A TO220F
3.400
-
Standard
1500V
10A (DC)
1.35V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
220ns
250µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
NUR460/L01,112
NXP
DIODE GEN PURP 600V 4A DO201AD
3.006
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
150°C (Max)
NUR460/L02,112
NXP
DIODE GEN PURP 600V 4A DO201AD
4.032
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
150°C (Max)
NUR460/L04,112
NXP
DIODE GEN PURP 600V 4A DO201AD
8.604
-
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
50µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
150°C (Max)
BYC8B-600PQP
NXP
DIODE GEN PURP 600V 8A
2.520
-
Standard
600V
8A
3.4V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
18ns
20µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
175°C (Max)
BAS316/ZLF
NXP
DIODE GEN PURP 100V 215MA SOD323
2.610
-
Standard
100V
215mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
500nA @ 80V
1.5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
BAS321/ZLF
NXP
DIODE GEN PURP 200V 250MA SOD323
2.088
-
Standard
200V
250mA (DC)
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
BAS321/ZLX
NXP
DIODE GEN PURP 200V 250MA SOD323
8.244
-
Standard
200V
250mA (DC)
1.25V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
BAS316/ZLX
NXP
DIODE GEN PURP 100V 215MA SOD323
7.398
-
Standard
100V
215mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
500nA @ 80V
1pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
BAS40/ZLVL
NXP
DIODE SCHOTTKY 40V 120MA SOT23
6.516
-
Schottky
40V
120mA (DC)
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 40V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
150°C (Max)