Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Milioni di parti elettroniche in magazzino. Quotazioni su prezzi e tempi di consegna entro 24 ore.

Microsemi Raddrizzatori - Singoli

Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 5/86
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
1N4150UR-1
Microsemi
DIODE GEN PURP 50V 200MA DO213AA
17.832
-
Standard
50V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
1N4153-1
Microsemi
DIODE GEN PURP 50V 150MA DO35
7.164
-
Standard
50V
150mA
880mV @ 20mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 50V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
1N914UR
Microsemi
DIODE GEN PURP 75V 200MA DO213AA
8.280
-
Standard
75V
200mA
1.2V @ 50mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
4pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
APT60DQ100BG
Microsemi
DIODE GEN PURP 1KV 60A TO247
532
-
Standard
1000V
60A
3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
255ns
100µA @ 1000V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N5418
Microsemi
DIODE GEN PURP 400V 3A B-MELF
1.848
-
Standard
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 400V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
UES1106
Microsemi
DIODE GEN PURP 400V 1A AXIAL
7.664
-
Standard
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Through Hole
A, Axial
-
-55°C ~ 150°C
UES1103
Microsemi
DIODE GEN PURP 150V 2.5A AXIAL
8.208
-
Standard
150V
2.5A
975mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 150V
-
Through Hole
A, Axial
-
175°C (Max)
APT15DQ60BG
Microsemi
DIODE GEN PURP 600V 15A TO247
10.128
-
Standard
600V
15A
2.4V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
19ns
25µA @ 600V
-
Through Hole
TO-247-3
TO-247 [B]
-55°C ~ 175°C
APT30D30BG
Microsemi
DIODE GEN PURP 300V 30A TO247
5.526
-
Standard
300V
30A
1.4V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
250µA @ 300V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N5616US
Microsemi
DIODE GEN PURP 400V 1A D5A
17
-
Standard
400V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 400V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
1N5553
Microsemi
DIODE GEN PURP 800V 3A AXIAL
164
-
Standard
800V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N5619US
Microsemi
DIODE GEN PURP 600V 1A D5A
6.876
-
Standard
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 600V
25pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
1N5553US
Microsemi
DIODE GEN PURP 800V 3A B-MELF
6.768
-
Standard
800V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
UES1002
Microsemi
DIODE GEN PURP 100V 1A AXIAL
6.276
-
Standard
100V
1A
975mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 100V
-
Through Hole
A, Axial
-
-55°C ~ 175°C
1N6663US
Microsemi
DIODE GEN PURP 600V 500MA D5A
6.060
-
Standard
600V
500mA (DC)
1V @ 400mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
UES1102SM
Microsemi
DIODE GEN PURP 100V 2.5A A-MELF
7.452
-
Standard
100V
2.5A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 100V
3.5pF @ 6V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
150°C (Max)
MSC010SDA120B
Microsemi
DIODE SCHOTTKY 1.2KV 10A TO247
6.384
-
Silicon Carbide Schottky
1200V
10A (DC)
1.5V @ 10A
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-247-2
TO-247
-
MSC030SDA070S
Microsemi
GEN2 SIC SBD 700V 30A D3PAK
5.670
-
Silicon Carbide Schottky
700V
30A (DC)
1.8V @ 30A
No Recovery Time > 500mA (Io)
0ns
-
-
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
D3Pak
-55°C ~ 175°C
MSC050SDA070B
Microsemi
DIODE SCHOTTKY 700V 50A TO247
6.252
-
Silicon Carbide Schottky
700V
50A (DC)
1.5V @ 50A
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-247-2
TO-247
-
MSC050SDA070S
Microsemi
GEN2 SIC SBD 700V 50A D3PAK
7.128
-
Silicon Carbide Schottky
700V
88A (DC)
1.8V @ 50A
No Recovery Time > 500mA (Io)
0ns
200µA @ 700V
2034pF @ 1V, 1MHz
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
D3Pak
-55°C ~ 175°C
MSC050SDA120S
Microsemi
UNRLS, FG, GEN2, SIC SBD, TO-268
6.324
-
Silicon Carbide Schottky
1200V
50A (DC)
-
No Recovery Time > 500mA (Io)
0ns
-
-
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
D3Pak
-
UPR20E3/TR7
Microsemi
DIODE GEN PURP 200V 2A POWERMITE
6.714
-
Standard
200V
2A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
-
Surface Mount
DO-216AA
Powermite
-55°C ~ 150°C
LSM345J/TR13
Microsemi
DIODE SCHOTTKY 45V 3A DO214AB
3.582
-
Schottky
45V
3A
520mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 45V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 150°C
1N4607
Microsemi
DIODE GEN PURP 85V 200MA DO35
11.100
-
Standard
85V
200mA
1.1V @ 400mA
Small Signal =< 200mA (Io), Any Speed
10ns
100µA @ 50V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 200°C
1N4608
Microsemi
DIODE GEN PURP 85V 200MA DO35
6.228
-
Standard
85V
200mA
1.1V @ 400mA
Small Signal =< 200mA (Io), Any Speed
10ns
100µA @ 50V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
JANTXV1N4150-1
Microsemi
DIODE GEN PURP 50V 200MA DO35
5.544
Military, MIL-PRF-19500/231
Standard
50V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
1N5811US/TR
Microsemi
UFR,FRR
3.600
-
Standard
150V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 150V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
JANTX1N3957
Microsemi
DIODE GEN PURP 1KV 1A
8.820
Military, MIL-PRF-19500/228
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 1000V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTX1N914UR
Microsemi
DIODE GEN PURP 75V 200MA DO213AA
6.576
Military, MIL-PRF-19500/116
Standard
75V
200mA
1.2V @ 50mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 75V
4pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
JANTXV1N5620
Microsemi
DIODE GEN PURP 800V 1A
5.796
Military, MIL-PRF-19500/427
Standard
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 200°C