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Microsemi Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 1/86
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
LSM115JE3/TR13
Microsemi
DIODE SCHOTTKY 15V 1A DO214BA
306.126
-
Schottky
15V
1A
220mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 15V
-
Surface Mount
DO-214BA
DO-214BA
-55°C ~ 150°C
UPS5100E3/TR13
Microsemi
DIODE SCHOTTKY 100V 5A POWERMITE
51.768
-
Schottky
100V
5A
810mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
150pF @ 4V, 1MHz
Surface Mount
Powermite®3
Powermite 3
-55°C ~ 125°C
UPS840E3/TR13
Microsemi
DIODE SCHOTTKY 40V 8A POWERMITE3
41.856
-
Schottky
40V
8A
450mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 40V
-
Surface Mount
Powermite®3
Powermite 3
-55°C ~ 125°C
1N4148UR-1
Microsemi
DIODE GEN PURP 75V 200MA DO213AA
24.036
-
Standard
75V
200mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
-
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
1N647-1
Microsemi
DIODE GEN PURP 400V 400MA DO35
26.898
-
Standard
400V
400mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 400V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
APT40DQ60BG
Microsemi
DIODE GEN PURP 600V 40A TO247
21.996
-
Standard
600V
40A
2.4V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N649-1
Microsemi
DIODE GEN PURP 600V 400MA DO35
21.960
-
Standard
600V
400mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 600V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
APT100S20BG
Microsemi
DIODE SCHOTTKY 200V 120A TO247
56.868
-
Schottky
200V
120A
950mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
2mA @ 200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
1N5615
Microsemi
DIODE GEN PURP 200V 1A AXIAL
3.622
-
Standard
200V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 200V
45pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
1N5712
Microsemi
DIODE SCHOTTKY 20V 75MA DO35
17.147
-
Schottky
20V
75mA
1V @ 35mA
Small Signal =< 200mA (Io), Any Speed
-
150nA @ 16V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 150°C
1N5806US
Microsemi
DIODE GEN PURP 150V 1A D5A
7.748
-
Standard
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 150V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
1N6642US
Microsemi
DIODE GEN PURP 75V 300MA D5D
16.554
-
Standard
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 75V
5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
1N5811US
Microsemi
DIODE GEN PURP 150V 3A B-MELF
15.936
-
Standard
150V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N5822US
Microsemi
DIODE SCHOTTKY 40V 3A B-MELF
1.027
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 125°C
UPS120E3/TR7
Microsemi
DIODE SCHOTTKY 20V 1A POWERMITE1
80.832
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 125°C
UPS5817E3/TR7
Microsemi
DIODE SCHOTTKY 20V 1A POWERMITE1
28.122
-
Schottky
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 150°C
UPS560E3/TR13
Microsemi
DIODE SCHOTTKY 60V 5A POWERMITE3
45.540
-
Schottky
60V
5A
690mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
150pF @ 4V, 1MHz
Surface Mount
Powermite®3
Powermite 3
-55°C ~ 125°C
UPS115UE3/TR7
Microsemi
DIODE SCHOTTKY 15V 1A POWERMITE
22.068
-
Schottky
15V
1A
220mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 15V
150pF @ 5V, 1MHz
Surface Mount
DO-216AA
Powermite
-55°C ~ 150°C
UFS180JE3/TR13
Microsemi
DIODE GEN PURP 800V 1A DO214BA
22.230
-
Standard
800V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
20µA @ 800V
-
Surface Mount
DO-214BA
DO-214BA
-55°C ~ 175°C
HSM8100JE3/TR13
Microsemi
DIODE SCHOTTKY 100V 8A DO214AB
26.832
-
Schottky
100V
8A
780mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
1N4148-1
Microsemi
DIODE GEN PURP 75V 200MA DO35
33.144
-
Standard
75V
200mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
JANTX1N4148UR-1
Microsemi
DIODE GEN PURP 75V 200MA DO213AA
15.996
Military, MIL-PRF-19500/116
Standard
75V
200mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
4pF @ 0V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
APT30D60BG
Microsemi
DIODE GEN PURP 600V 30A TO247
84.054
-
Standard
600V
30A
1.8V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT40DQ120BG
Microsemi
DIODE GEN PURP 1.2KV 40A TO247
12.486
-
Standard
1200V
40A
3.3V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
100µA @ 1200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT30D100BG
Microsemi
DIODE GEN PURP 1KV 30A TO247
13.938
-
Standard
1000V
30A
2.3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
APT60D60BG
Microsemi
DIODE GEN PURP 600V 60A TO247
6.672
-
Standard
600V
60A
1.8V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
130ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N5618
Microsemi
DIODE GEN PURP 600V 1A AXIAL
11.028
-
Standard
600V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 600V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
1N5417
Microsemi
DIODE GEN PURP 200V 3A AXIAL
6.696
-
Standard
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
-
Through Hole
Axial
B, Axial
-65°C ~ 175°C
1N5620
Microsemi
DIODE GEN PURP 800V 1A AXIAL
151
-
Standard
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
1N5619
Microsemi
DIODE GEN PURP 600V 1A AXIAL
7.488
-
Standard
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 600V
25pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C