IXYS Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreIXYS
Record 2.184
Pagina 7/73
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 900V 26A SOT-227B |
6.456 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240nC @ 10V | ±20V | 10800pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 100V 230A SOT-227B |
18.612 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 230A (Tc) | 10V | 6mOhm @ 500mA, 10V | 4V @ 8mA | 570nC @ 10V | ±20V | 19000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 80A SOT-227B |
41 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 66A (Tc) | 10V | 55mOhm @ 500mA, 10V | 4.5V @ 8mA | 380nC @ 10V | ±20V | 9890pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1KV 36A SOT-227B |
9.204 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 36A (Tc) | 10V | 240mOhm @ 500mA, 10V | 5V @ 8mA | 380nC @ 10V | ±20V | 9200pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 0.1A TO-252AA |
8.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 100mA (Tc) | - | 110Ohm @ 50mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 100V 180A TO-263 |
6.144 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151nC @ 10V | ±30V | 6900pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 150V 180A TO-264 |
5.040 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 180A (Tc) | 10V | 10mOhm @ 90A, 10V | 5V @ 500µA | 240nC @ 10V | ±20V | 7000pF @ 25V | - | 800W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
300V/150A ULTRA JUNCTION X3-CLAS |
4.428 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 150A (Tc) | 10V | 8.3mOhm @ 75A, 10V | 4.5V @ 4mA | 254nC @ 10V | ±20V | 13.1nF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 64A PLUS247 |
7.146 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 64A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200nC @ 10V | ±30V | 12000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 72A SOT-227B |
6.336 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 75mOhm @ 41A, 10V | 5V @ 8mA | 240nC @ 10V | ±30V | 23000pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 4500V 0.2A I4PAK |
6.678 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4nC @ 10V | ±20V | 256pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 (3 Leads) |
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IXYS |
MOSFET N-CH 4500V 1A TO268 |
160 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 1A (Tc) | 10V | 85Ohm @ 50mA, 10V | 6.5V @ 250µA | 40nC @ 10V | ±20V | 1730pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1000V 38A SOT-227B |
5.778 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 38A (Tc) | 10V | 210mOhm @ 19A, 10V | 6.5V @ 1mA | 350nC @ 10V | ±30V | 24000pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 75A SOT-227B |
4.248 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 75A (Tc) | 10V | 36mOhm @ 50A, 10V | 3.9V @ 5mA | 500nC @ 10V | ±20V | - | Super Junction | 560W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 800V 50A SOT-227B |
14 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 50A (Tc) | 10V | 160mOhm @ 500mA, 10V | 5.5V @ 8mA | 260nC @ 10V | ±30V | 13500pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 900V 56A SOT-227B |
5.971 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 900V | 56A (Tc) | 10V | 135mOhm @ 28A, 10V | 6.5V @ 3mA | 375nC @ 10V | ±30V | 23000pF @ 25V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 2500V 5A TO264 |
5.364 |
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- | N-Channel | MOSFET (Metal Oxide) | 2500V | 5A (Tc) | 10V | 8.8Ohm @ 2.5A, 10V | 5V @ 1mA | 200nC @ 10V | ±30V | 8560pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 1245A Y3-LI |
4.896 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1220A (Tc) | 10V | 1.35mOhm @ 932A, 10V | 4V @ 64mA | 2520nC @ 10V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-Li | Y3-Li |
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IXYS |
MOSFET N-CH 1000V 0.8A TO220AB |
17.556 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | - | 21Ohm @ 400mA, 0V | - | 14.6nC @ 5V | ±20V | 325pF @ 25V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 1.6A DPAK |
13.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | - | 10Ohm @ 800mA, 0V | - | 27nC @ 5V | ±20V | 645pF @ 25V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 500V 1.6A TO220AB |
8.064 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 1.6A (Tc) | - | 2.3Ohm @ 800mA, 0V | - | 23.7nC @ 5V | ±20V | 645pF @ 25V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 130A TO-220 |
20.880 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±30V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 130A TO-263 |
9.144 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±30V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 100V 52A TO-220 |
6.288 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 50mOhm @ 500mA, 10V | 4.5V @ 250µA | 60nC @ 10V | ±20V | 2845pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 34A TO-220 |
7.416 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 34A (Tc) | 10V | 105mOhm @ 17A, 10V | 5.5V @ 2.5mA | 56nC @ 10V | ±30V | 3330pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 2000V 1A TO-247 |
7.218 |
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- | N-Channel | MOSFET (Metal Oxide) | 2000V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5nC @ 10V | ±20V | 646pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 2000V 1A TO-247HV |
8.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 2000V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5nC @ 10V | ±20V | 646pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
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IXYS |
MOSFET P-CH 500V 10A TO-247 |
5.958 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 2840pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
7.182 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET P-CH 200V 48A TO-268 |
6.336 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 85mOhm @ 24A, 10V | 4.5V @ 250µA | 103nC @ 10V | ±20V | 5400pF @ 25V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |