Global Power Technologies Group Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreGlobal Power Technologies Group
Record 133
Pagina 5/5
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Global Power Technologies Group |
MOSFET N-CH 600V 4.2A IPAK |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.2A (Tc) | 10V | 2.1Ohm @ 2.1A, 10V | 5V @ 250µA | 14nC @ 10V | ±30V | 658pF @ 25V | - | 98.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 800V 7A TO220F |
5.490 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | 1410pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A TO220F |
4.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 1.2Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 1063pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 600V 7.5A IPAK |
2.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 1.2Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 1063pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 600V 10A TO220F |
8.946 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1660pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 650V 9.5A TO220F |
2.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 9.5A (Tc) | 10V | 820mOhm @ 4.75A, 10V | 5V @ 250µA | 36nC @ 10V | ±30V | 1670pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 650V 9.5A TO220 |
4.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 9.5A (Tc) | 10V | 820mOhm @ 4.75A, 10V | 5V @ 250µA | 36nC @ 10V | ±30V | 1670pF @ 25V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 900V 11A TO3PN |
7.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 900mOhm @ 5.5A, 10V | 5V @ 250µA | 84nC @ 10V | ±30V | 3240pF @ 25V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 12A TO220F |
2.826 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1890pF @ 25V | - | 53.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 800V 12A TO3PN |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 79nC @ 10V | ±30V | 3370pF @ 25V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 13A TO220F |
4.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1798pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 18A TO220 |
4.122 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 300mOhm @ 9A, 10V | 5V @ 250µA | 44nC @ 10V | ±30V | 2880pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 20A TO3PN |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 330mOhm @ 10A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 3184pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |