Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Milioni di parti elettroniche in magazzino. Quotazioni su prezzi e tempi di consegna entro 24 ore.

GeneSiC Semiconductor Transistor - FET, MOSFET - Singolo

Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreGeneSiC Semiconductor
Record 27
Pagina 1/1
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo FET
Tecnologia
Tensione Drain to Source (Vdss)
Corrente - Scarico continuo (Id) @ 25 ° C
Tensione inverter (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (massimo)
Capacità di ingresso (Ciss) (Max) @ Vds
Funzione FET
Dissipazione di potenza (max)
Temperatura di esercizio
Tipo di montaggio
Pacchetto dispositivo fornitore
Pacchetto / Custodia
GA05JT12-263
GeneSiC Semiconductor
TRANS SJT 1200V 15A
20.400
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
15A (Tc)
-
-
-
-
-
-
-
106W (Tc)
175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GA20JT12-263
GeneSiC Semiconductor
TRANS SJT 1200V 45A
7.794
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
45A (Tc)
-
60mOhm @ 20A
-
-
-
3091pF @ 800V
-
282W (Tc)
175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GA10JT12-263
GeneSiC Semiconductor
TRANS SJT 1200V 25A
17.196
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
25A (Tc)
-
120mOhm @ 10A
-
-
-
1403pF @ 800V
-
170W (Tc)
175°C (TJ)
Surface Mount
-
-
GA08JT17-247
GeneSiC Semiconductor
TRANS SJT 1700V 8A TO-247AB
14.616
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
8A (Tc) (90°C)
-
250mOhm @ 8A
-
-
-
-
-
48W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA50JT12-247
GeneSiC Semiconductor
TRANS SJT 1.2KV 50A
6.024
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
100A (Tc)
-
25mOhm @ 50A
-
-
-
7209pF @ 800V
-
583W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA04JT17-247
GeneSiC Semiconductor
TRANS SJT 1700V 4A TO-247AB
8.172
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
4A (Tc) (95°C)
-
480mOhm @ 4A
-
-
-
-
-
106W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA05JT01-46
GeneSiC Semiconductor
TRANS SJT 100V 9A
6.156
-
-
SiC (Silicon Carbide Junction Transistor)
100V
9A (Tc)
-
240mOhm @ 5A
-
-
-
-
-
20W (Tc)
-55°C ~ 225°C (TJ)
Through Hole
TO-46
TO-46-3
GA05JT03-46
GeneSiC Semiconductor
TRANS SJT 300V 9A
4.752
-
-
SiC (Silicon Carbide Junction Transistor)
300V
9A (Tc)
-
240mOhm @ 5A
-
-
-
-
-
20W (Tc)
-55°C ~ 225°C (TJ)
Through Hole
TO-46
TO-46-3
GA10SICP12-263
GeneSiC Semiconductor
TRANS SJT 1200V 25A TO263-7
8.496
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
25A (Tc)
-
100mOhm @ 10A
-
-
-
1403pF @ 800V
-
170W (Tc)
175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GA50JT06-258
GeneSiC Semiconductor
TRANS SJT 600V 100A
6.300
-
-
SiC (Silicon Carbide Junction Transistor)
600V
100A (Tc)
-
25mOhm @ 50A
-
-
-
-
-
769W (Tc)
-55°C ~ 225°C (TJ)
Through Hole
TO-258
TO-258-3, TO-258AA
GA16JT17-247
GeneSiC Semiconductor
TRANS SJT 1700V 16A TO-247AB
8.460
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
16A (Tc) (90°C)
-
110mOhm @ 16A
-
-
-
-
-
282W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
2N7635-GA
GeneSiC Semiconductor
TRANS SJT 650V 4A TO-257
4.518
-
-
SiC (Silicon Carbide Junction Transistor)
650V
4A (Tc) (165°C)
-
415mOhm @ 4A
-
-
-
324pF @ 35V
-
47W (Tc)
-55°C ~ 225°C (TJ)
Through Hole
TO-257
TO-257-3
2N7636-GA
GeneSiC Semiconductor
TRANS SJT 650V 4A TO276
3.562
-
-
SiC (Silicon Carbide Junction Transistor)
650V
4A (Tc) (165°C)
-
415mOhm @ 4A
-
-
-
324pF @ 35V
-
125W (Tc)
-55°C ~ 225°C (TJ)
Surface Mount
TO-276
TO-276AA
2N7637-GA
GeneSiC Semiconductor
TRANS SJT 650V 7A TO-257
5.634
-
-
SiC (Silicon Carbide Junction Transistor)
650V
7A (Tc) (165°C)
-
170mOhm @ 7A
-
-
-
720pF @ 35V
-
80W (Tc)
-55°C ~ 225°C (TJ)
Through Hole
TO-257
TO-257-3
2N7638-GA
GeneSiC Semiconductor
TRANS SJT 650V 8A TO276
6.678
-
-
SiC (Silicon Carbide Junction Transistor)
650V
8A (Tc) (158°C)
-
170mOhm @ 8A
-
-
-
720pF @ 35V
-
200W (Tc)
-55°C ~ 225°C (TJ)
Surface Mount
TO-276
TO-276AA
2N7639-GA
GeneSiC Semiconductor
TRANS SJT 650V 15A TO-257
4.086
-
-
SiC (Silicon Carbide Junction Transistor)
650V
15A (Tc) (155°C)
-
105mOhm @ 15A
-
-
-
1534pF @ 35V
-
172W (Tc)
-55°C ~ 225°C (TJ)
Through Hole
TO-257
TO-257-3
2N7640-GA
GeneSiC Semiconductor
TRANS SJT 650V 16A TO276
8.208
-
-
SiC (Silicon Carbide Junction Transistor)
650V
16A (Tc) (155°C)
-
105mOhm @ 16A
-
-
-
1534pF @ 35V
-
330W (Tc)
-55°C ~ 225°C (TJ)
Surface Mount
TO-276
TO-276AA
GA03JT12-247
GeneSiC Semiconductor
TRANS SJT 1200V 3A TO-247AB
2.556
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
3A (Tc) (95°C)
-
460mOhm @ 3A
-
-
-
-
-
15W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA06JT12-247
GeneSiC Semiconductor
TRANS SJT 1200V 6A TO-247AB
4.194
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
6A (Tc) (90°C)
-
220mOhm @ 6A
-
-
-
-
-
-
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA05JT12-247
GeneSiC Semiconductor
TRANS SJT 1200V 5A
4.896
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
5A (Tc)
-
280mOhm @ 5A
-
-
-
-
-
106W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA10JT12-247
GeneSiC Semiconductor
TRANS SJT 1.2KV 10A
7.020
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
10A (Tc)
-
140mOhm @ 10A
-
-
-
-
-
170W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA20JT12-247
GeneSiC Semiconductor
TRANS SJT 1.2KV 20A
2.862
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
20A (Tc)
-
70mOhm @ 20A
-
-
-
-
-
282W (Tc)
175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA50JT17-247
GeneSiC Semiconductor
TRANS SJT 1.7KV 100A
2.358
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
100A (Tc)
-
25mOhm @ 50A
-
-
-
-
-
583W (Tc)
175°C (TJ)
Through Hole
TO-247
TO-247-3
GA100JT12-227
GeneSiC Semiconductor
TRANS SJT 1200V 160A SOT227
8.334
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
160A (Tc)
-
10mOhm @ 100A
-
-
-
14400pF @ 800V
-
535W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
GA20SICP12-247
GeneSiC Semiconductor
TRANS SJT 1200V 45A TO247
7.074
-
-
SiC (Silicon Carbide Junction Transistor)
1200V
45A (Tc)
-
50mOhm @ 20A
-
-
-
3091pF @ 800V
-
282W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AB
TO-247-3
GA50JT12-263
GeneSiC Semiconductor
TRANSISTOR 1200V 100A TO263-7
3.562
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GA100JT17-227
GeneSiC Semiconductor
TRANS SJT 1700V 160A SOT227
8.694
-
-
SiC (Silicon Carbide Junction Transistor)
1700V
160A (Tc)
-
10mOhm @ 100A
-
-
-
14400pF @ 800V
-
535W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC