EPC2108 Datasheet
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Produttore EPC Serie eGaN® Tipo FET 3 N-Channel (Half Bridge + Synchronous Bootstrap) Funzione FET GaNFET (Gallium Nitride) Tensione Drain to Source (Vdss) 60V, 100V Corrente - Scarico continuo (Id) @ 25 ° C 1.7A, 500mA Rds On (Max) @ Id, Vgs 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Vgs (th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs 0.22nC @ 5V, 0.044nC @ 5V Capacità di ingresso (Ciss) (Max) @ Vds 22pF @ 30V, 7pF @ 30V Potenza - Max - Temperatura di esercizio -40°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto / Custodia 9-VFBGA Pacchetto dispositivo fornitore 9-BGA (1.35x1.35) |