Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 114/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
2.430 |
|
- | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
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|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
3.996 |
|
- | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
3.562 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
3.672 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
6.912 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
4.104 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
3.852 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
3.186 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 400MA DO204 |
3.888 |
|
SUPERECTIFIER® | Standard | 300V | 400mA | 1.5V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1µs | 2µA @ 300V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO221BC |
3.834 |
|
eSMP® | Standard | 600V | 3A | 1.16V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.3µs | 5µA @ 600V | 13pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO221BC |
4.104 |
|
eSMP® | Standard | 600V | 3A | 1.16V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.3µs | 5µA @ 600V | 13pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO221BC |
7.974 |
|
eSMP® | Standard | 200V | 3A | 1.16V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.3µs | 5µA @ 200V | 13pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -55°C ~ 175°C |
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|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO221BC |
8.352 |
|
eSMP® | Standard | 200V | 3A | 1.16V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.3µs | 5µA @ 200V | 13pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO221BC |
6.552 |
|
eSMP® | Standard | 400V | 3A | 1.16V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.3µs | 5µA @ 400V | 13pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO221BC |
5.544 |
|
eSMP® | Standard | 600V | 3A | 1.16V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.3µs | 5µA @ 600V | 13pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.7A DO214AC |
4.986 |
|
TMBS® | Schottky | 100V | 1.7A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | 175pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
8.244 |
|
- | Standard | 200V | 2A (DC) | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
3.042 |
|
- | Standard | 400V | 2A (DC) | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
8.550 |
|
- | Standard | 600V | 2A (DC) | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 2A DO214AA |
6.750 |
|
- | Standard | 800V | 2A (DC) | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2A DO214AA |
3.348 |
|
- | Standard | 1000V | 2A (DC) | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
6.354 |
|
- | Standard | 200V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
8.874 |
|
- | Standard | 400V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
8.298 |
|
- | Standard | 600V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 2A DO214AA |
3.456 |
|
- | Standard | 800V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 2A DO214AA |
3.852 |
|
- | Standard | 1000V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
3.618 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
6.876 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
7.542 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
3.492 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |