Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 496/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
8.550 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 6V, 10V | 25mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | 5160pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
5.040 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 28A (Tc) | 6V, 10V | 25mOhm @ 10.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±20V | 5160pF @ 40V | - | 5.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Sanken |
MOSFET N-CH 200V TO-220F |
2.214 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Ta) | 10V | 175mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 850pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Sanken |
MOSFET N-CH 50V 50A TO-220F |
8.982 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 50A (Ta) | 10V | 13mOhm @ 25A, 10V | 2.5V @ 250µA | - | ±20V | 2700pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 4.5A TO-220SIS |
5.958 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 44A D2PAK |
2.664 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Ta), 44A (Tc) | 6V, 10V | 28mOhm @ 44A, 10V | 4V @ 250µA | 31nC @ 10V | ±20V | 1710pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 120A TO-220-3 |
2.214 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 99nC @ 10V | ±20V | 8030pF @ 30V | - | 205W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO220AB |
4.320 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95nC @ 10V | - | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 2A X2 TO-252 |
3.024 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Tc) | 10V | 2.3Ohm @ 1A, 10V | 5V @ 250µA | 4.3nC @ 10V | ±30V | 180pF @ 25V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2.646 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
6.192 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7A TO-220SIS |
8.424 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 7A (Ta) | 10V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 43A D2PAK |
8.262 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 8A TO-220SIS |
6.588 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 8A (Ta) | 10V | 900mOhm @ 4A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7.5A TO-220SIS |
3.526 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Ta) | 10V | 1.04Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 80V 120A I2PAK |
5.670 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | ±20V | 8161pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 30V 64A U8FL |
5.022 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16.3A (Ta), 64A (Tc) | - | 3.5mOhm @ 20A, 10V | 2.3V @ 250µA | 29.4nC @ 10V | - | 2075pF @ 15V | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Sanken |
MOSFET N-CH 250V 25A TO-220F |
3.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Ta) | 10V | 75mOhm @ 12A, 10V | 4.5V @ 1mA | - | ±30V | 2000pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 30V 45A DPAK |
4.284 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 2700pF @ 15V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 650V 8A X2 TO-220 |
4.338 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 500mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3A TO-220SIS |
4.698 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 3A (Ta) | 10V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
5.004 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Nexperia |
BUK7J1R0-40H/SOT1023/4 LEADS |
2.718 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia |
BUK9J0R9-40H/SOT1023/4 LEADS |
5.850 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Sanken |
MOSFET N-CH 250V TO-220F |
8.172 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 18A (Ta) | 10V | 250mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 850pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 60V 38A 250A 5DFN |
4.734 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
TRANSISTOR N-CH |
8.838 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 800V 3.5A TO-220 |
3.546 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 5.5V @ 100µA | 14.2nC @ 10V | ±30V | 750pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 15A TO-252 |
2.538 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 15A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 150V 24A TO-252 |
8.442 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 24A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |