Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 449/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N CH 75V 56A I-PAK |
3.978 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | ±20V | 3107pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
TRANSISTOR N-CH |
2.682 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
MOSFET N-CH 250V 0.215A TO92-3 |
4.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 215mA (Ta) | 4.5V, 10V | 7Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110pF @ 25V | - | 740mW (Ta) | - | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 220V 0.26A SOT89-3 |
5.616 |
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- | P-Channel | MOSFET (Metal Oxide) | 220V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK |
8.712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | ±16V | 1870pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Sanken |
MOSFET N-CH 30V 80A TO-263 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 57A, 10V | 2.5V @ 650µA | 38.8nC @ 10V | ±20V | 2460pF @ 15V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 40V 80A TO-263 |
4.032 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 42.8A, 10V | 2.5V @ 650µA | 35.3nC @ 10V | ±20V | 2410pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 60V 57A TO-263 |
6.102 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 4.5V, 10V | 8.8mOhm @ 28.5A, 10V | 2.5V @ 650µA | 38.6nC @ 10V | ±20V | 2520pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 75V 46A TO-263 |
7.920 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 46A (Tc) | 4.5V, 10V | 13.6mOhm @ 22.8A, 10V | 2.5V @ 650µA | 36.2nC @ 10V | ±20V | 2520pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Sanken |
MOSFET N-CH 100V 34A TO-263 |
6.336 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 4.5V, 10V | 27.9mOhm @ 17.1A, 10V | 2.5V @ 650µA | 35.8nC @ 10V | ±20V | 2540pF @ 25V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 5.3A TO251 IPAK |
8.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | ±30V | 325pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
5.508 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 25A SO8FL |
6.624 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 130A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.1W (Ta), 69W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
QF -500V 4.9OHM DPAK |
3.508 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 500V | 2.1A (Tc) | 10V | 4.9Ohm @ 1.05A, 10V | 5V @ 250µA | 23nC @ 10V | ±30V | 660pF @ 25V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
SUPERFET3 650V DPAK PKG |
4.284 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 600mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | ±30V | 465pF @ 400V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 29A 140A 5DFN |
5.184 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 140A (Tc) | 10V | 2.3mOhm @ 50A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 2100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
8.118 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | Super Junction | 30W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 40V 60A POWERPAKSO-8 |
8.208 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.35mOhm @ 15A, 10V | 2.3V @ 250µA | 48nC @ 4.5V | +20V, -16V | 5300pF @ 20V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 40V 29A 130A 5DFN |
3.690 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 130A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2V @ 250µA | 50nC @ 10V | ±20V | 3100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 20V 4.2A 6TSOP |
6.732 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 24mOhm @ 5.6A, 4.5V | 1.4V @ 250µA | 20.3nC @ 4.5V | ±8V | 935pF @ 16V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Nexperia |
MOSFET N-CH 100V 53A TO220AB |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 53A (Ta) | 7V, 10V | 18mOhm @ 15A, 10V | 4V @ 1mA | 21.4nC @ 10V | ±20V | 1482pF @ 50V | - | 111W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CHANNEL 100V 53A I2PAK |
7.326 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 53A (Ta) | 7V, 10V | 18mOhm @ 15A, 10V | 4V @ 1mA | 21.4nC @ 10V | ±20V | 1482pF @ 50V | - | 111W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-220-3, Short Tab |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO252 |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 950mOhm @ 1.3A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 910pF @ 100V | - | 125W (Tc) | -50°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 40V 80A POWERDI5060 |
3.132 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 48nC @ 10V | 20V | 2847pF @ 20V | - | 2.8W | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 55V 20A I-PAK |
7.326 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | - | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | - | 660pF @ 50V | - | - | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
8.568 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | - | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | - | 900pF @ 25V | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
2.754 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3.580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
2.322 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 22A 100A 5DFN |
3.762 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 2200pF @ 50V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |