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Memoria

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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
Record 46.590
Pagina 615/1553
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di memoria
Formato memoria
Tecnologia
Dimensione della memoria
Interfaccia di memoria
Frequenza di clock
Tempo di ciclo di scrittura - Parola, pagina
Tempo di accesso
Tensione - Alimentazione
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
CY7C1440KVE33-167AXC
Cypress Semiconductor
IC SRAM 36M PARALLEL 100TQFP
223
-
Volatile
SRAM
SRAM - Synchronous, SDR
36Mb (1M x 36)
Parallel
167MHz
-
3.4ns
3.135V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
CY7C1441KVE33-133AXC
Cypress Semiconductor
IC SRAM 36M PARALLEL 100TQFP
3.924
-
Volatile
SRAM
SRAM - Synchronous, SDR
36Mb (1M x 36)
Parallel
133MHz
-
6.5ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
7006S25G
IDT, Integrated Device Technology
IC SRAM 128K PARALLEL 68PGA
7.830
-
Volatile
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
25ns
25ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
68-BPGA
68-PGA (29.46x29.46)
CY7C1460KVE25-167AXC
Cypress Semiconductor
IC SRAM 36M PARALLEL 100TQFP
7.272
NoBL™
Volatile
SRAM
SRAM - Synchronous, SDR
36Mb (1M x 36)
Parallel
167MHz
-
3.4ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
CY7C1460KVE33-200AXC
Cypress Semiconductor
IC SRAM 36M PARALLEL 100TQFP
3.006
NoBL™
Volatile
SRAM
SRAM - Synchronous, SDR
36Mb (1M x 36)
Parallel
200MHz
-
3.2ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
MT53D512M64D4HR-053 WT:D
Micron Technology Inc.
IC DRAM 32G 1866MHZ
3.726
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
366-WFBGA
366-WFBGA (12x12.7)
MT53D512M64D4NZ-053 WT:D
Micron Technology Inc.
IC DRAM 32G 1866MHZ
3.135
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
MT53D512M64D4NZ-053 WT:D TR
Micron Technology Inc.
IC DRAM 32G 1866MHZ
3.348
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
MT53D512M64D4HR-053 WT:D TR
Micron Technology Inc.
IC DRAM LPDDR4 32G SMD
4.320
-
-
-
-
-
-
-
-
-
-
-
-
-
-
70V3389S6BF8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 208CABGA
7.470
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (64K x 18)
Parallel
-
-
6ns
3.15V ~ 3.45V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
CY14B116N-ZSP45XIT
Cypress Semiconductor
IC NVSRAM 16M PARALLEL 54TSOP
4.176
-
Non-Volatile
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (1M x 16)
Parallel
-
45ns
45ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
CY14B116S-BZ25XIT
Cypress Semiconductor
IC NVSRAM 16M PARALLEL 165FBGA
6.912
-
Non-Volatile
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (512K x 32)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
7006L35G
IDT, Integrated Device Technology
IC SRAM 128K PARALLEL 68PGA
6.966
-
Volatile
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
35ns
35ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
68-BPGA
68-PGA (29.46x29.46)
70V3579S6BCI8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 256CABGA
3.132
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (32K x 36)
Parallel
-
-
6ns
3.15V ~ 3.45V
-40°C ~ 85°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
70V657S12BC8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 256CABGA
7.578
-
Volatile
SRAM
SRAM - Dual Port, Asynchronous
1.125Mb (32K x 36)
Parallel
-
12ns
12ns
3.15V ~ 3.45V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
70V657S12BF8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 208CABGA
4.644
-
Volatile
SRAM
SRAM - Dual Port, Asynchronous
1.125Mb (32K x 36)
Parallel
-
12ns
12ns
3.15V ~ 3.45V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
70V3389S4BC8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 256CABGA
3.526
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (64K x 18)
Parallel
-
-
4.2ns
3.15V ~ 3.45V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
70V3389S4BF8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 208CABGA
7.164
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (64K x 18)
Parallel
-
-
4.2ns
3.15V ~ 3.45V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
70V3579S4BC8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 256CABGA
7.524
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (32K x 36)
Parallel
-
-
4.2ns
3.15V ~ 3.45V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
70V3579S4BF8
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 208CABGA
2.286
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (32K x 36)
Parallel
-
-
4.2ns
3.15V ~ 3.45V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
CY7C1460KVE33-167AXI
Cypress Semiconductor
IC SRAM 36M PARALLEL 100TQFP
6.066
NoBL™
Volatile
SRAM
SRAM - Synchronous, SDR
36Mb (1M x 36)
Parallel
167MHz
-
3.4ns
3.135V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
MT44K16M36RB-093E:B TR
Micron Technology Inc.
IC DRAM 576M PARALLEL 168BGA
8.100
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT44K32M18RB-093E:B TR
Micron Technology Inc.
IC DRAM 576M PARALLEL 168BGA
7.416
-
Volatile
DRAM
DRAM
576Mb (32M x 18)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT44K16M36RB-093E:B
Micron Technology Inc.
IC DRAM 576M PARALLEL 1067MHZ
691
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
CY7C1460KVE25-250AXC
Cypress Semiconductor
IC SRAM 36M PARALLEL 100TQFP
6.511
NoBL™
Volatile
SRAM
SRAM - Synchronous, SDR
36Mb (1M x 36)
Parallel
250MHz
-
2.5ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
70V9199L7PFG
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 100TQFP
4.140
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (128K x 9)
Parallel
-
-
7ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
70V9199L9PFGI
IDT, Integrated Device Technology
IC SRAM 1.125M PARALLEL 100TQFP
7.758
-
Volatile
SRAM
SRAM - Dual Port, Synchronous
1.125Mb (128K x 9)
Parallel
-
-
9ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS49RL18320-125BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 576M PARALLEL 168BGA
7.002
-
Volatile
DRAM
DRAM
576Mb (32M x 18)
Parallel
800MHz
-
12ns
1.28V ~ 1.42V
-40°C ~ 85°C (TA)
Surface Mount
168-LBGA
168-FC(LF)BGA (13.5x13.5)
IS49RL36160-125BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 576M PARALLEL 168BGA
6.660
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
800MHz
-
12ns
1.28V ~ 1.42V
-40°C ~ 85°C (TA)
Surface Mount
168-LBGA
168-FC(LF)BGA (13.5x13.5)
7009L20PFG
IDT, Integrated Device Technology
IC SRAM 1M PARALLEL 100TQFP
3.366
-
Volatile
SRAM
SRAM - Dual Port, Asynchronous
1Mb (128K x 8)
Parallel
-
20ns
20ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)