Memoria
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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
Record 46.590
Pagina 570/1553
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di memoria | Formato memoria | Tecnologia | Dimensione della memoria | Interfaccia di memoria | Frequenza di clock | Tempo di ciclo di scrittura - Parola, pagina | Tempo di accesso | Tensione - Alimentazione | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
6.948 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
5.274 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
4.950 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
2.664 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
8.676 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
3.672 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
3.816 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
8.550 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
4.824 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
3.564 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
5.832 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 87MHz | - | 8.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G 1600MHZ |
5.742 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 8Gb (256M x 32) | - | 1600MHz | - | - | 1.1V | -40°C ~ 125°C (TC) | Surface Mount | 200-WFBGA | 200-WFBGA (10x14.5) |
|
|
|
Micron Technology Inc. |
IC DRAM 8G PARALLEL 1.2GHZ |
7.488 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 8Gb (1G x 8) | Parallel | 1.2GHz | - | - | 1.14V ~ 1.26V | -40°C ~ 105°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (8x12) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
3.006 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
3.507 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
|
|
|
Cypress Semiconductor |
IC NVSRAM 1M PARALLEL 48FBGA |
4.266 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (6x10) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
6.498 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 165CABGA |
8.226 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-CABGA (13x15) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
8.118 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
2.070 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
5.184 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 87MHz | - | 8.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
Swissbit |
IND EMBEDDED MMC EM-10 4 GB MLC |
6.858 |
|
EM-10 | Non-Volatile | FLASH | FLASH - NAND (MLC) | 4GB | eMMC | 52MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 153-VFBGA | 153-BGA (11.5x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
5.526 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (256M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 119PBGA |
7.632 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
5.220 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
IDT, Integrated Device Technology |
IC SRAM 9M PARALLEL 100TQFP |
8.514 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
6.012 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
4.212 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
|
|
|
Cypress Semiconductor |
IC FRAM 4MBIT 20MHZ 8GQFN |
8.262 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Cypress Semiconductor |
IC FRAM 4MBIT 20MHZ 8GQFN |
5.562 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |