Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 670/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 40A DO5 |
3.708 |
|
- | Standard | 100V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 40A DO5 |
6.822 |
|
- | Standard | 100V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 40A DO5 |
8.496 |
|
- | Standard | 200V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 40A DO5 |
8.496 |
|
- | Standard | 200V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 40A DO5 |
5.580 |
|
- | Standard | 400V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 40A DO5 |
6.840 |
|
- | Standard | 600V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 40A DO5 |
6.192 |
|
- | Standard | 600V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 40A DO5 |
4.608 |
|
- | Standard | 800V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1KV 40A DO5 |
5.922 |
|
- | Standard | 1000V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
7.002 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE RECT ULT FAST REC A-PKG |
5.706 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 1.1KV 1A A-MELF |
3.168 |
|
- | Standard | 1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 5A AXIAL |
448 |
|
Military, MIL-PRF-19500/420 | Standard | 200V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 200A WAFER |
8.334 |
|
- | Standard | 1200V | 200A (DC) | 1.41V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 850MA AXIAL |
114 |
|
- | Standard | 150V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
|
|
|
Semtech |
DIODE GEN PURP 400V 2A AXIAL |
3.508 |
|
- | Standard | 400V | 2A | 1.95V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 1A AXIAL |
4.086 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 800V 49A DO203AB |
6.138 |
|
- | Standard | 800V | 49A | 1.55V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
|
|
|
IXYS |
DIODE GEN PURP 800V 49A DO203AB |
3.222 |
|
- | Standard | 800V | 49A | 1.55V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 180°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A D5A |
7.956 |
|
Military, MIL-PRF-19500/427 | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
5.508 |
|
- | Standard, Reverse Polarity | 600V | 85A | 1.75V @ 266.9A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 20V DO4 |
3.294 |
|
- | Schottky, Reverse Polarity | 20V | 25A | 580mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 25V DO4 |
3.816 |
|
- | Schottky, Reverse Polarity | 25V | 25A | 580mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 35V DO4 |
7.146 |
|
- | Schottky, Reverse Polarity | 35V | 25A | 580mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 40V DO4 |
7.236 |
|
- | Schottky, Reverse Polarity | 40V | 25A | 580mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |
5.022 |
|
- | Standard | 1400V | 70A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |
4.464 |
|
- | Standard, Reverse Polarity | 1400V | 70A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
3.672 |
|
Military, MIL-PRF-19500/429 | Standard | 1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
8.586 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 85A DO203AB |
4.716 |
|
- | Standard | 1000V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1000V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |