Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 629/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 12A DO4 |
6.714 |
|
- | Standard | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 12A DO4 |
4.194 |
|
- | Standard, Reverse Polarity | 400V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 12A DO4 |
5.328 |
|
- | Standard | 600V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 12A DO4 |
2.556 |
|
- | Standard, Reverse Polarity | 600V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 12A DO4 |
2.088 |
|
- | Standard | 800V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 12A DO4 |
2.718 |
|
- | Standard, Reverse Polarity | 800V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1000V 12A DO4 |
2.052 |
|
- | Standard | 1000V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 12A DO4 |
4.266 |
|
- | Standard, Reverse Polarity | 1000V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1200V 12A DO4 |
6.372 |
|
- | Standard | 1200V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.2KV 12A DO4 |
3.402 |
|
- | Standard, Reverse Polarity | 1200V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 40A TO247AC |
2.394 |
|
- | Schottky | 15V | 40A | 520mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 2000pF @ 5V, 1MHz | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 125°C |
|
|
|
Microsemi |
DIODE RECT STD RECOVERY |
4.608 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE RECT STD RECOVERY |
5.562 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 180V 100MA DO7 |
8.478 |
|
- | Standard | 180V | 100mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 180V 100MA DO7 |
4.680 |
|
- | Standard | 180V | 100mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 400MA DO213 |
8.856 |
|
- | Standard | 600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 700V 12A DO203AA |
2.754 |
|
- | Standard | 700V | 12A | 1.35V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900µA @ 700V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 700V 12A DO203AA |
2.358 |
|
- | Standard, Reverse Polarity | 700V | 12A | 1.35V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900µA @ 700V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
7.974 |
|
- | Standard | 100V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 50µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 12A TO220-2 |
7.560 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 632pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
RECTIFIER DIODE |
6.426 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 100A POWERTAB |
3.420 |
|
Automotive, AEC-Q101 | Schottky | 30V | 100A | 630mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4mA @ 30V | - | Through Hole | PowerTab® | PowerTab® | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 800V 3.6A AXIAL |
5.688 |
|
- | Standard | 800V | 3.6A | 1.25V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 180°C |
|
|
|
Microsemi |
ZENER DIODE |
8.496 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
2.988 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 640pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 200MA DO35 |
5.022 |
|
- | Schottky | 20V | 200mA | 510mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
|
|
|
Microsemi |
SCHOTTKY DIODE |
6.156 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
2.484 |
|
Military, MIL-PRF-19500/286 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
1.171 |
|
FRED Pt® | Standard | 200V | 60A | 1.08V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | 50µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 12A DO203AA |
3.330 |
|
- | Standard | 800V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |