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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 621/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
DHG20I600HA
IXYS
DIODE GEN PURP 600V 20A TO247
6.318
-
Standard
600V
20A
2.24V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 (HA)
-55°C ~ 150°C
VS-ETU3006STRLHM3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO263AB
7.668
Automotive, AEC-Q101, FRED Pt®
Standard
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-65°C ~ 175°C
VS-ETU3006STRRHM3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO263AB
6.354
Automotive, AEC-Q101, FRED Pt®
Standard
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-65°C ~ 175°C
VS-20TQ035PBF
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 35V 20A TO220AC
5.958
-
Schottky
35V
20A
570mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7mA @ 35V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
CDLL3600
Microsemi
DIODE GEN PURP 50V 300MA DO213AA
8.748
-
Standard
50V
300mA
680mV @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
2.5pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
VS-HFA08PB60-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO247AC
3.896
HEXFRED®
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
5µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
VS-16FR10
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 16A DO203AA
8.100
-
Standard, Reverse Polarity
100V
16A
1.23V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 175°C
DSI45-08A
IXYS
DIODE GEN PURP 800V 45A TO247AD
2.016
-
Standard
800V
45A
1.28V @ 45A
Standard Recovery >500ns, > 200mA (Io)
-
20µA @ 800V
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 175°C
DMA30E1800HA
IXYS
DIODE GEN PURP 1800V 30A TO247
2.970
-
Standard
1800V
30A
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
40µA @ 1800V
10pF @ 400V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
VS-65EPS16L-M3
Vishay Semiconductor Diodes Division
RECTIFIER DIODE 65A 1600V TO-247
4.086
*
-
-
-
-
-
-
-
-
-
-
-
-
VS-30EPF02PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 30A TO247AC
2.988
-
Standard
200V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 200V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
VS-30EPF04PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 30A TO247AC
6.246
-
Standard
400V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 400V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
VS-50EPU12LHN3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 50A TO247AD
6.444
Automotive, AEC-Q101, FRED Pt®
Standard
1200V
50A
2.55V @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
262ns
330µA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
IDC15D120T6MX1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
4.122
-
Standard
1200V
25A
2.05V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
5.2µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
CDLL6676
Microsemi
DIODE SCHOTTKY 30V 200MA DO213AA
8.082
-
Schottky
30V
200mA
500mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 30V
50pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 125°C
STPS20M100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
5.382
-
Schottky
100V
20A
850mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
40µA @ 100V
-
Through Hole
TO-220-3
TO-220AB
150°C (Max)
VS-6FR40
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 6A DO203AA
6.084
-
Standard, Reverse Polarity
400V
6A
1.1V @ 19A
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 400V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 175°C
GP2D012A065C
Global Power Technologies Group
DIODE SCHOTTKY 650V 29A TO252-2
6.894
Amp+™
Silicon Carbide Schottky
650V
29A (DC)
1.9V @ 12A
No Recovery Time > 500mA (Io)
0ns
200µA @ 650V
632pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
CDLL4454
Microsemi
DIODE GEN PURP 50V 200MA DO213AA
4.014
-
Standard
50V
200mA
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 50V
-
Surface Mount
DO-213AA
DO-213AA
-55°C ~ 175°C
SIDC14D120H8X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
8.712
-
Standard
1200V
25A (DC)
1.97V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
20µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
1N3595-1E3
Microsemi
DIODE ZENER 125 V DO-35
3.672
-
Standard
125V
150mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
3µs
1nA @ 125V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35 (DO-204AH)
-65°C ~ 175°C
VS-20ETS08FP-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 20A TO220FP
5.994
-
Standard
800V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 800V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full Pack
-40°C ~ 150°C
CDLL4150
Microsemi
DIODE GEN PURP 75V 300MA DO213AA
5.310
-
Standard
75V
300mA
1V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
2.5pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
DSA1-16D
IXYS
DIODE AVALANCHE 1.6KV 2.3A
5.274
-
Avalanche
1600V
2.3A
1.34V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
700µA @ 1600V
-
Through Hole
Radial
-
-40°C ~ 150°C
IDD09SG60CXTMA2
Infineon Technologies
DIODE SCHOTTKY 600V 9A TO252-3
2.178
CoolSiC™+
Silicon Carbide Schottky
600V
9A (DC)
2.1V @ 9A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
VS-20ETS16-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.6KV 20A TO220AB
8.550
-
Standard
1600V
20A
1.1V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1600V
-
Through Hole
TO-220-3
TO-220AB
-40°C ~ 150°C
1N4531UR
Microsemi
DIODE GEN PURP 75V 125MA DO213AA
8.046
-
Standard
75V
125mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
PF8
PF8
Semtech
DIODE GEN PURP 800V 850MA AXIAL
4.554
-
Standard
800V
850mA
1.35V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
1µA @ 800V
18pF @ 5V, 1MHz
Through Hole
Axial
-
-
PFF2
Semtech
DIODE GEN PURP 200V 1.25A AXIAL
6.678
-
Standard
200V
1.25A
2.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 200V
30pF @ 5V, 1MHz
Through Hole
Axial
-
-65°C ~ 175°C
VS-6TQ045PBF
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V 6A TO220AC
5.868
-
Schottky
45V
6A
600mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C