IXYS Integrated Circuits Division PMIC - Gate driver
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CategoriaSemiconduttori / CI di gestione dell'alimentazione / PMIC - Gate driver
ProduttoreIXYS Integrated Circuits Division
Record 125
Pagina 4/5
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Configurazione guidata | Tipo di canale | Numero di driver | Tipo di porta | Tensione - Alimentazione | Tensione logica - VIL, VIH | Corrente - Uscita di picco (Source, Sink) | Tipo di ingresso | High Side Voltage - Max (Bootstrap) | Tempo di salita / discesa (tipico) | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS Integrated Circuits Division |
IC HIGH SIDE DRIVER 8SOIC |
7.668 |
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- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 12V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC MOSFET/IGBT DVR 600V 8-SOIC |
6.534 |
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- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 12V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR HALF 600V 14SOIC |
8.676 |
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- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2V | 1.4A, 1.8A | Non-Inverting | 600V | 23ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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IXYS Integrated Circuits Division |
14A 8 PIN DIP INVERTING |
7.110 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
14A 8 PIN DIP NON INVERTING |
7.002 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR HIGH/LOW 600V 16SOIC |
6.894 |
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- | Half-Bridge | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR HALF 600V 14DIP |
6.768 |
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- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2V | 1.4A, 1.8A | Non-Inverting | 600V | 23ns, 14ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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IXYS Integrated Circuits Division |
IC GATE DRVR 600V HI/LO 14DIP |
7.452 |
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- | Half-Bridge | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
2.322 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
4.608 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
2.808 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
4.572 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
5.796 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
3.114 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO263-5 |
3.132 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263 |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO220-5 |
4.680 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO220-5 |
3.348 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV TO263-5 |
6.426 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INV W/ENAB |
7.578 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
14A 8LEAD SOIC EXP MTL INVERTING |
3.420 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INVERTING |
3.618 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
14A 5 PIN TO-220 INVERTING |
2.304 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 |
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IXYS Integrated Circuits Division |
14A 5PIN TO-220 NON INVERTING |
3.438 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Formed Leads | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DVR HIGH/LOW 600V 16SOIC |
4.860 |
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- | Half-Bridge | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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IXYS Integrated Circuits Division |
1200V HIGH AND LOW SIDE GATE DRI |
7.236 |
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- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 15V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 1200V | 9.4ns, 9.7ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220 |
8.370 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220 |
7.866 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263 |
8.262 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO220 |
2.394 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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IXYS Integrated Circuits Division |
IC GATE DRIVER LOW SIDE 5TO263 |
7.434 |
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- | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |