STW60NE10 Datasheet
STW60NE10 Datasheet
Totale pagine: 8
Dimensioni: 287,3 KB
STMicroelectronics
Sito web: https://www.st.com/
Questa scheda tecnica copre i numeri di parte di 1:
STW60NE10
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Produttore STMicroelectronics Serie STripFET™ Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 100V Corrente - Scarico continuo (Id) @ 25 ° C 60A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22mOhm @ 30A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 5300pF @ 25V Funzione FET - Dissipazione di potenza (max) 180W (Tc) Temperatura di esercizio 175°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore TO-247-3 Pacchetto / Custodia TO-247-3 |