SQ2308CES-T1_GE3 Datasheet
SQ2308CES-T1_GE3 Datasheet
Totale pagine: 10
Dimensioni: 266,05 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SQ2308CES-T1_GE3
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Produttore Vishay Siliconix Serie Automotive, AEC-Q101, TrenchFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 60V Corrente - Scarico continuo (Id) @ 25 ° C 2.3A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 150mOhm @ 2.3A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 10V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 205pF @ 30V Funzione FET - Dissipazione di potenza (max) 2W (Tc) Temperatura di esercizio -55°C ~ 175°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore SOT-23 (TO-236AB) Pacchetto / Custodia TO-236-3, SC-59, SOT-23-3 |