SIS932EDN-T1-GE3 Datasheet
SIS932EDN-T1-GE3 Datasheet
Totale pagine: 9
Dimensioni: 257,2 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SIS932EDN-T1-GE3
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Produttore Vishay Siliconix Serie TrenchFET® Tipo FET 2 N-Channel (Dual) Funzione FET Standard Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 6A (Tc) Rds On (Max) @ Id, Vgs 22mOhm @ 10A, 4.5V Vgs (th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Capacità di ingresso (Ciss) (Max) @ Vds 1000pF @ 15V Potenza - Max 2.6W (Ta), 23W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto / Custodia PowerPAK® 1212-8 Dual Pacchetto dispositivo fornitore PowerPAK® 1212-8 Dual |