SIRA72DP-T1-GE3 Datasheet
SIRA72DP-T1-GE3 Datasheet
Totale pagine: 13
Dimensioni: 398,63 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SIRA72DP-T1-GE3
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Produttore Vishay Siliconix Serie TrenchFET® Gen IV Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 40V Corrente - Scarico continuo (Id) @ 25 ° C 60A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 10A, 10V Vgs (th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (massimo) +20V, -16V Capacità di ingresso (Ciss) (Max) @ Vds 3240pF @ 20V Funzione FET - Dissipazione di potenza (max) 56.8W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore PowerPAK® SO-8 Pacchetto / Custodia PowerPAK® SO-8 |