SIHG16N50C-E3 Datasheet
SIHG16N50C-E3 Datasheet
Totale pagine: 7
Dimensioni: 144,42 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SIHG16N50C-E3
![SIHG16N50C-E3 Datasheet Pagina 1](http://pneda.ltd/static/datasheets/images/24/sihg16n50c-e3-0001.webp)
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Produttore Vishay Siliconix Serie - Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 500V Corrente - Scarico continuo (Id) @ 25 ° C 16A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 8A, 10V Vgs (th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 1900pF @ 25V Funzione FET - Dissipazione di potenza (max) 250W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore TO-247AC Pacchetto / Custodia TO-247-3 |