SIA446DJ-T1-GE3 Datasheet
SIA446DJ-T1-GE3 Datasheet
Totale pagine: 9
Dimensioni: 262,88 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SIA446DJ-T1-GE3
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Produttore Vishay Siliconix Serie ThunderFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 150V Corrente - Scarico continuo (Id) @ 25 ° C 7.7A (Tc) Tensione inverter (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 177mOhm @ 3A, 10V Vgs (th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 230pF @ 75V Funzione FET - Dissipazione di potenza (max) 3.5W (Ta), 19W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore PowerPAK® SC-70-6 Single Pacchetto / Custodia PowerPAK® SC-70-6 |