SI5446DU-T1-GE3 Datasheet
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Produttore Vishay Siliconix Serie TrenchFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 25A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.4mOhm @ 10A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (massimo) +20V, -16V Capacità di ingresso (Ciss) (Max) @ Vds 1610pF @ 15V Funzione FET - Dissipazione di potenza (max) 31W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore PowerPAK® ChipFet Single Pacchetto / Custodia PowerPAK® ChipFET™ Single |
Produttore Vishay Siliconix Serie TrenchFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 20V Corrente - Scarico continuo (Id) @ 25 ° C 25A (Tc) Tensione inverter (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 10mOhm @ 8A, 4.5V Vgs (th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 8V Vgs (massimo) ±8V Capacità di ingresso (Ciss) (Max) @ Vds 1700pF @ 10V Funzione FET - Dissipazione di potenza (max) 3.1W (Ta), 31W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore PowerPAK® ChipFet Single Pacchetto / Custodia PowerPAK® ChipFET™ Single |