SI4110DY-T1-GE3 Datasheet
SI4110DY-T1-GE3 Datasheet
Totale pagine: 7
Dimensioni: 100,41 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SI4110DY-T1-GE3
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Produttore Vishay Siliconix Serie TrenchFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 80V Corrente - Scarico continuo (Id) @ 25 ° C 17.3A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13mOhm @ 11.7A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 2205pF @ 40V Funzione FET - Dissipazione di potenza (max) 3.6W (Ta), 7.8W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore 8-SO Pacchetto / Custodia 8-SOIC (0.154", 3.90mm Width) |