RJK2006DPE-00#J3 Datasheet
RJK2006DPE-00#J3 Datasheet
Totale pagine: 10
Dimensioni: 238,26 KB
Renesas Electronics America
Questa scheda tecnica copre i numeri di parte di 1:
RJK2006DPE-00#J3
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Produttore Renesas Electronics America Serie - Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 200V Corrente - Scarico continuo (Id) @ 25 ° C 40A (Ta) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 10V Vgs (th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 1800pF @ 25V Funzione FET - Dissipazione di potenza (max) 100W (Tc) Temperatura di esercizio 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore 4-LDPAK Pacchetto / Custodia SC-83 |