RFP50N06 Datasheet
RFP50N06 Datasheet
Totale pagine: 10
Dimensioni: 1.360,48 KB
ON Semiconductor
Sito web: http://www.onsemi.com/
Questa scheda tecnica copre i numeri di parte di 1:
RFP50N06
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Produttore ON Semiconductor Serie - Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 60V Corrente - Scarico continuo (Id) @ 25 ° C 50A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 20V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 2020pF @ 25V Funzione FET - Dissipazione di potenza (max) 131W (Tc) Temperatura di esercizio -55°C ~ 175°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore TO-220-3 Pacchetto / Custodia TO-220-3 |