PMCM4401VNEAZ Datasheet
PMCM4401VNEAZ Datasheet
Totale pagine: 15
Dimensioni: 723,01 KB
Nexperia
Questa scheda tecnica copre i numeri di parte di 1:
PMCM4401VNEAZ
![PMCM4401VNEAZ Datasheet Pagina 1](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0001.webp)
![PMCM4401VNEAZ Datasheet Pagina 2](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0002.webp)
![PMCM4401VNEAZ Datasheet Pagina 3](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0003.webp)
![PMCM4401VNEAZ Datasheet Pagina 4](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0004.webp)
![PMCM4401VNEAZ Datasheet Pagina 5](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0005.webp)
![PMCM4401VNEAZ Datasheet Pagina 6](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0006.webp)
![PMCM4401VNEAZ Datasheet Pagina 7](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0007.webp)
![PMCM4401VNEAZ Datasheet Pagina 8](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0008.webp)
![PMCM4401VNEAZ Datasheet Pagina 9](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0009.webp)
![PMCM4401VNEAZ Datasheet Pagina 10](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0010.webp)
![PMCM4401VNEAZ Datasheet Pagina 11](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0011.webp)
![PMCM4401VNEAZ Datasheet Pagina 12](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0012.webp)
![PMCM4401VNEAZ Datasheet Pagina 13](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0013.webp)
![PMCM4401VNEAZ Datasheet Pagina 14](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0014.webp)
![PMCM4401VNEAZ Datasheet Pagina 15](http://pneda.ltd/static/datasheets/images/115/pmcm4401vneaz-0015.webp)
Produttore Nexperia USA Inc. Serie - Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 12V Corrente - Scarico continuo (Id) @ 25 ° C 4.7A (Ta) Tensione inverter (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 42mOhm @ 3A, 4.5V Vgs (th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V Vgs (massimo) ±8V Capacità di ingresso (Ciss) (Max) @ Vds 335pF @ 6V Funzione FET - Dissipazione di potenza (max) 400mW (Ta), 12.5W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore 4-WLCSP (2x2) Pacchetto / Custodia 4-XFBGA, WLCSP |