IRF6607TR1 Datasheet
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Produttore Infineon Technologies Serie HEXFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 27A (Ta), 94A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V Vgs (massimo) ±12V Capacità di ingresso (Ciss) (Max) @ Vds 6930pF @ 15V Funzione FET - Dissipazione di potenza (max) 3.6W (Ta), 42W (Tc) Temperatura di esercizio -40°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore DIRECTFET™ MT Pacchetto / Custodia DirectFET™ Isometric MT |
Produttore Infineon Technologies Serie HEXFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 27A (Ta), 94A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V Vgs (massimo) ±12V Capacità di ingresso (Ciss) (Max) @ Vds 6930pF @ 15V Funzione FET - Dissipazione di potenza (max) 3.6W (Ta), 42W (Tc) Temperatura di esercizio -40°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore DIRECTFET™ MT Pacchetto / Custodia DirectFET™ Isometric MT |