FQU11P06TU Datasheet
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Produttore ON Semiconductor Serie QFET® Tipo FET P-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 60V Corrente - Scarico continuo (Id) @ 25 ° C 9.4A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 185mOhm @ 4.7A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 550pF @ 25V Funzione FET - Dissipazione di potenza (max) 2.5W (Ta), 38W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore I-PAK Pacchetto / Custodia TO-251-3 Short Leads, IPak, TO-251AA |
Produttore ON Semiconductor Serie QFET® Tipo FET P-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 60V Corrente - Scarico continuo (Id) @ 25 ° C 9.4A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 185mOhm @ 4.7A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 550pF @ 25V Funzione FET - Dissipazione di potenza (max) 2.5W (Ta), 38W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore D-Pak Pacchetto / Custodia TO-252-3, DPak (2 Leads + Tab), SC-63 |