FCH023N65S3L4 Datasheet
FCH023N65S3L4 Datasheet
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ON Semiconductor
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FCH023N65S3L4
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Produttore ON Semiconductor Serie SuperFET® III Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 650V Corrente - Scarico continuo (Id) @ 25 ° C 75A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 37.5A, 10V Vgs (th) (Max) @ Id 4.5V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs 222nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 7160pF @ 400V Funzione FET - Dissipazione di potenza (max) 595W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore TO-247 Pacchetto / Custodia TO-247-4 |