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Toshiba Semiconductor and Storage Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreToshiba Semiconductor and Storage
Record 225
Pagina 3/8
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
CCS15S30,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 1.5A CST2C
4.842
-
Schottky
20V
1.5A
400mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 0V, 1MHz
Surface Mount
0603 (1608 Metric)
CST2C
125°C (Max)
CCS15S40,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1.5A CST2C
6.498
-
Schottky
40V
1.5A
550mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
170pF @ 0V, 1MHz
Surface Mount
0603 (1608 Metric)
CST2C
125°C (Max)
CBS05F30,L3F
Toshiba Semiconductor and Storage
X34 PB-F CST2B SBD DIODE VR:30V,
3.598
-
Schottky
30V
500mA
-
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 30V
118pF @ 0V, 1MHz
Surface Mount
SOD-882
CST2B
125°C (Max)
CUS15S40,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1.5A
7.704
-
Schottky
40V
1.5A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
170pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
1SS397TE85LF
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 100MA SC70
3.672
-
Standard
400V
100mA
1.3V @ 100mA
Small Signal =< 200mA (Io), Any Speed
500ns
1µA @ 400V
5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SC-70
125°C (Max)
CCS15F40,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1.5A CST2C
7.182
-
Schottky
40V
1.5A
640mV @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 40V
130pF @ 0V, 1MHz
Surface Mount
0603 (1608 Metric)
CST2C
150°C (Max)
CUHS10F60,H3F
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
8.928
-
Schottky
60V
1A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
40µA @ 60V
130pF @ 0V, 1MHz
Surface Mount
2-SMD, Flat Lead
US2H
150°C (Max)
CCS15S30,L3QUF
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 1.5A CST2C
7.002
-
Schottky
20V
1.5A
400mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
200pF @ 0V, 1MHz
Surface Mount
0603 (1608 Metric)
CST2C
125°C (Max)
CMS10(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 1A MFLAT
2.032
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
50pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
1SS404,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 300MA USC
7.668
-
Schottky
20V
300mA
450mV @ 300mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 20V
46pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
CTS520,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 200MA CST2
4.806
-
Schottky
30V
200mA
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 30V
16pF @ 0V, 1MHz
Surface Mount
SOD-882
CST2
125°C (Max)
TBAS16,LM
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 215MA SOT23-3
6.642
-
Standard
80V
215mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
SOT-23-3 Flat Leads
SOT-23-3
-
TBAT54,LM
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 140MA SOT23
3.472
-
Schottky
30V
140mA
580mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1.5ns
2µA @ 25V
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
150°C (Max)
CRS06(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 1A SFLAT
7.866
-
Schottky
20V
1A
360mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
60pF @ 10V, 1MHz
Surface Mount
SOD-123F
S-FLAT (1.6x3.5)
-40°C ~ 125°C
1SS250(TE85L,F)
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA SC59
8.136
-
Standard
200V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
60ns
1µA @ 200V
3pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
125°C (Max)
CUS08F30,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 800MA USC
2.502
-
Schottky
30V
800mA
220mV @ 10mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 30V
170pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
CUS357,H3F
Toshiba Semiconductor and Storage
SMALL SIGNAL SCHOTTKY BARRIER DI
4.788
-
Schottky
40V
100mA
600mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 40V
11pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
1SS406,H3F
Toshiba Semiconductor and Storage
SMALL SIGNAL SCHOTTKY BARRIER DI
4.878
*
-
-
-
-
-
-
-
-
-
-
-
-
1SS385FV,L3F
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
5.562
*
-
-
-
-
-
-
-
-
-
-
-
-
1SS403E,L3F
Toshiba Semiconductor and Storage
SINGLE SWITCHING DIODE 200V 0.1A
3.762
*
-
-
-
-
-
-
-
-
-
-
-
-
1SS322(TE85L,F)
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
2.196
*
-
-
-
-
-
-
-
-
-
-
-
-
1SS321,LF
Toshiba Semiconductor and Storage
SMALL SIGNAL SCHOTTKY BARRIER DI
4.338
*
-
-
-
-
-
-
-
-
-
-
-
-
1SS372(TE85L,F)
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
2.646
*
-
-
-
-
-
-
-
-
-
-
-
-
1SS385,LF(CT
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
3.780
*
-
-
-
-
-
-
-
-
-
-
-
-
1SS422(TE85L,F)
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
4.734
*
-
-
-
-
-
-
-
-
-
-
-
-
BAS516,L3F
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA ESC
7.200
-
Standard
100V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
3ns
200nA @ 80V
0.35pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
ESC
150°C (Max)
BAS316,H3F
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA USC
7.578
-
Standard
100V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
3ns
200nA @ 80V
0.35pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
150°C (Max)
BAS516,H3F
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA ESC
7.326
-
Standard
100V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
3ns
200nA @ 80V
0.35pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
ESC
150°C (Max)
CUS521,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 200MA USC
6.318
-
Schottky
30V
200mA
500mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
30µA @ 30V
26pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
USC
125°C (Max)
1SS187,LF
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA S-MINI
7.956
-
Standard
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
4pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
125°C (Max)