Taiwan Semiconductor Corporation Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreTaiwan Semiconductor Corporation
Record 301
Pagina 6/11
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 80A 8PDFN |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 11.1nC @ 4.5V | ±20V | 1160pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO252 |
5.364 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 4A TO252 |
5.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3.37Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | ±30V | 549pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 5A TO252 |
6.354 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38Ohm @ 2.4A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO252 |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4Ohm @ 1A, 10V | 5V @ 250µA | 9.5nC @ 10V | ±30V | 362pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A TO252 |
2.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 545pF @ 25V | - | 86.2W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 129A 8PDFN |
6.606 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 129A (Tc) | 4.5V, 10V | 3.3mOhm @ 21A, 10V | 2.5V @ 250µA | 31nC @ 10V | ±20V | 1850pF @ 15V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 3A TO252 |
5.706 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3A (Tc) | 10V | 1.4Ohm @ 900mA, 10V | 4V @ 250µA | 7.12nC @ 10V | ±30V | 257.3pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 1000V 1.85A TO252 |
6.624 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.85A (Tc) | 10V | 8.5Ohm @ 900mA, 10V | 5.5V @ 250µA | 17nC @ 10V | ±30V | 625pF @ 25V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 3A TO252 |
7.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 3A (Tc) | 10V | 1.4Ohm @ 1.2A, 10V | 4V @ 250µA | 7.4nC @ 10V | ±30V | 317pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 40V 135A TO252 |
7.434 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 135A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.5V @ 250µA | 104nC @ 10V | ±20V | 5509pF @ 20V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 150V 24A 8PDFN |
8.118 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 24A (Tc) | 6V, 10V | 65mOhm @ 4A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 1829pF @ 75V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 66A TO252 |
2.250 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 66A (Tc) | 10V | 7.3mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 4382pF @ 30V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 3A TO252 |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 6A TO252 |
3.330 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 750mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7nC @ 10V | ±30V | 555pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 900V 2.5A TO252 |
5.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 5.1Ohm @ 1.25A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 748pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 4.5A TO252 |
6.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 482pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 9.5A TO252 |
8.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.5A (Tc) | 10V | 380mOhm @ 2.85A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 795pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 8A TO252 |
3.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 100V 81A TO220 |
18.648 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 81A (Tc) | 10V | 10mOhm @ 40A, 10V | 4V @ 250µA | 154nC @ 10V | ±20V | 3900pF @ 30V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 75V 190A TO220 |
15.312 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 190A (Tc) | 10V | 4.2mOhm @ 90A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 8600pF @ 30V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 4A ITO220 |
16.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 650V 4A ITO220 |
20.496 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3.37Ohm @ 2A, 10V | 4.5V @ 250µA | 13.46nC @ 10V | ±30V | 549pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 5A ITO220S |
19.008 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.38Ohm @ 1.7A, 10V | 4.5V @ 250µA | 15nC @ 10V | ±30V | 586pF @ 50V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 7A ITO220S |
18.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 1169pF @ 50V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 650V 10A ITO220S |
20.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.5V @ 250µA | 34nC @ 10V | ±30V | 1650pF @ 50V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 4.5A ITO220 |
18.576 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 482pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 100A TO220 |
10.692 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 6.7mOhm @ 30A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 4382pF @ 30V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 4.5A ITO220 |
21.660 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 480pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 4A TO220 |
23.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |