NXP Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreNXP USA Inc.
Record 58
Pagina 1/2
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXP |
DIODE GEN PURP 75V 250MA ALF2 |
2.700 |
|
- | Standard | 75V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
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NXP |
DIODE GEN PURP 75V 250MA ALF2 |
7.218 |
|
- | Standard | 75V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
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NXP |
DIODE GEN PURP 75V 250MA ALF2 |
2.142 |
|
- | Standard | 75V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
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NXP |
DIODE SCHOTTKY 20V 1A MELF |
3.400 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 70pF @ 4V, 1MHz | Surface Mount | SOD-87 | MELF | 125°C (Max) |
|
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NXP |
DIODE SCHOTTKY 20V 1A MELF |
265.794 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 70pF @ 4V, 1MHz | Surface Mount | SOD-87 | MELF | 125°C (Max) |
|
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NXP |
DIODE GEN PURP 100V 155MA SC75 |
7.812 |
|
- | Standard | 100V | 155mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-75, SOT-416 | SC-75 | 150°C (Max) |
|
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NXP |
DIODE GEN PURP 100V 200MA DO35 |
4.446 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
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NXP |
DIODE GEN PURP 100V 200MA ALF2 |
6.390 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
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NXP |
DIODE GEN PURP 75V 250MA SOD2 |
2.862 |
|
- | Standard | 75V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-110 | SOD110 | 150°C (Max) |
|
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NXP |
DIODE GEN PURP 75V 250MA SOD2 |
3.690 |
|
- | Standard | 75V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-110 | SOD110 | 150°C (Max) |
|
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NXP |
DIODE GEN PURP 1.5KV 10A TO220AC |
7.596 |
|
- | Standard | 1500V | 10A (DC) | 1.8V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 100µA @ 1300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
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NXP |
DIODE GEN PURP 1.5KV 6A TO220AC |
5.616 |
|
- | Standard | 1500V | 6A (DC) | 1.6V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 250µA @ 1300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
|
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NXP |
DIODE GEN PURP 80V 215MA SMT3 |
3.330 |
|
- | Standard | 80V | 215mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 500nA @ 80V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 150°C (Max) |
|
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NXP |
DIODE GEN PURP 80V 215MA SMT3 |
8.010 |
|
- | Standard | 80V | 215mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 500nA @ 80V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 150°C (Max) |
|
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NXP |
DIODE GEN PURP 1.2KV 8A TO220F |
5.400 |
|
- | Standard | 1200V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 145ns | 1mA @ 1000V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
|
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NXP |
DIODE SCHOTTKY 40V 500MA SMT3 |
6.786 |
|
- | Schottky | 40V | 500mA (DC) | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | 90pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3; MPAK | 125°C (Max) |
|
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NXP |
DIODE GEN PURP 100V 200MA ALF2 |
8.838 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
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NXP |
DIODE GEN PURP 100V 200MA ALF2 |
8.280 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | - |
|
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NXP |
DIODE GEN PURP 100V 200MA ALF2 |
8.136 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 200°C (Max) |
|
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NXP |
DIODE GEN PURP 50V MELF |
8.514 |
|
- | Standard | 50V | - | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE SCHOTTKY 40V 1A MELF |
2.772 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 50pF @ 4V, 1MHz | Surface Mount | SOD-87 | MELF | 125°C (Max) |
|
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NXP |
DIODE GEN PURP 100V 200MA ALF2 |
3.978 |
|
- | Standard | 100V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | ALF2 | 175°C (Max) |
|
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NXP |
DIODE AVALANCHE 200V 1.5A MELF |
3.546 |
|
- | Avalanche | 200V | 1.5A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 200V | 21pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE AVALANCHE 400V 1.5A MELF |
7.902 |
|
- | Avalanche | 400V | 1.5A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 400V | 21pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE AVALANCHE 600V 1.5A MELF |
4.248 |
|
- | Avalanche | 600V | 1.5A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 600V | 21pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE AVALANCHE 1KV 600MA MELF |
8.910 |
|
- | Avalanche | 1000V | 600mA | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 1µA @ 1000V | 20pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE AVALANCHE 100V 850MA MELF |
4.842 |
|
- | Avalanche | 100V | 850mA | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 50pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE AVALANCHE 200V 850MA MELF |
7.776 |
|
- | Avalanche | 200V | 850mA | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 50pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE AVALANCHE 800V 1.5A MELF |
2.898 |
|
- | Avalanche | 800V | 1.5A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 800V | 21pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
|
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NXP |
DIODE SCHOTTKY 30V 200MA SOD2 |
8.406 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SOD-110 | SOD110 | 125°C (Max) |