Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 6/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK |
44.466 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3 |
234.708 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4.7mOhm @ 90A, 10V | 4V @ 250µA | 154nC @ 10V | ±20V | 10300pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 90A TO252-3 |
86.736 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 90A, 10V | 2V @ 253µA | 160nC @ 10V | +5V, -16V | 11300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 90A TO252-3 |
51.816 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 10V | 4.5mOhm @ 90A, 10V | 4V @ 253µA | 130nC @ 10V | ±20V | 10300pF @ 25V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3 |
46.140 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 4.3mOhm @ 90A, 10V | 2.2V @ 250µA | 176nC @ 10V | ±16V | 11570pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A PQFN |
33.990 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 1.25mOhm @ 100A, 10V | 3.9V @ 150µA | 190nC @ 10V | ±20V | 6560pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 120V 75A TO252-3 |
121.542 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 75A (Tc) | 10V | 11mOhm @ 75A, 10V | 3V @ 83µA (Typ) | 65nC @ 10V | ±20V | 4310pF @ 60V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 30A TDSON-8 |
96.630 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 30A (Tc) | 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 122.4nC @ 10V | ±25V | 6140pF @ 15V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-3 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 80V 100A TDSON-8 |
382.800 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 16A (Ta), 100A (Tc) | 6V, 10V | 5.7mOhm @ 50A, 10V | 3.5V @ 73µA | 56nC @ 10V | ±20V | 3900pF @ 40V | - | 2.5W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 217A DIRECTFET |
70.908 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 217A (Tc) | 6V, 10V | 1.2mOhm @ 132A, 10V | 3.9V @ 150µA | 185nC @ 10V | ±20V | 6680pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
MOSFET N-CH 150V 6.2A DIRECTFET |
33.756 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 6.2A (Ta), 35A (Tc) | 10V | 34.5mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55nC @ 10V | ±20V | 2340pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 40V 19A DIRECTFET |
228.924 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 106A (Tc) | 4.5V, 10V | 5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3765pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 78A TO220AB |
68.694 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 4.8mOhm @ 40A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | ±20V | 2139pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
58.776 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 4.5V, 10V | 6.6mOhm @ 90A, 10V | 2.1V @ 90µA | 98nC @ 10V | ±16V | 6250pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 23A TDSON-8 |
142.566 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Ta), 100A (Tc) | 6V, 10V | 2.8mOhm @ 50A, 10V | 2.8V @ 50µA | 37nC @ 10V | ±20V | 2700pF @ 30V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 90A TO252-3 |
230.712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 5.3mOhm @ 90A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 10A VSON-4 |
52.950 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 365mOhm @ 2.7A, 10V | 4V @ 140µA | 13nC @ 10V | ±20V | 555pF @ 400V | - | 46W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET TO263-3 |
28.524 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 90A |
91.728 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 6V, 10V | 6.8mOhm @ 90A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A DIRECTFET |
39.312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 200V 18A TO-220AB |
88.932 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
341.442 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | 2V @ 250µA | 95nC @ 10V | ±20V | 6800pF @ 20V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3 |
56.694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 3.1mOhm @ 100A, 10V | 2.2V @ 93µA | 79nC @ 4.5V | ±20V | 13000pF @ 30V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 33A TO-220AB |
94.074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 30V 100A TDSON-8 |
1.129.608 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 25.4A (Ta), 100A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.1V @ 345µA | 186nC @ 10V | ±25V | 14000pF @ 15V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO252-3 |
59.430 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO-220AB |
24.900 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 49A TO-220AB |
22.434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1470pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A 8TDSON |
189.852 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 95µA | 72nC @ 10V | ±20V | 5300pF @ 50V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO263 |
80.310 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |