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Infineon Technologies Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 5/24
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
BAT2402ELSE6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 4V 110MA SC79-2
4.770
-
Schottky
4V
110mA (DC)
410mV @ 10mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 1V
230pF @ 0V, 1MHz
Surface Mount
0201 (0603 Metric)
PG-TSSLP-2-1
-55°C ~ 150°C
IDL02G65C5XUMA2
Infineon Technologies
DIODE SCHOTTKY 650V 2A VSON-4
3.564
CoolSiC™+
Silicon Carbide Schottky
650V
2A (DC)
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
35µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
IDK02G65C5XTMA2
Infineon Technologies
DIODE SCHOTTKY 650V 2A TO263-2
7.434
CoolSiC™+
Silicon Carbide Schottky
650V
2A (DC)
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
330µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK03G65C5XTMA2
Infineon Technologies
DIODE SCHOTTKY 650V 3A TO263-2
2.412
CoolSiC™+
Silicon Carbide Schottky
650V
3A (DC)
1.8V @ 3A
No Recovery Time > 500mA (Io)
0ns
500µA @ 650V
100pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDH02G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 2A TO220-2
7.578
CoolSiC™+
Silicon Carbide Schottky
650V
2A (DC)
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
-
70pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
IDD03SG60CXTMA2
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO252-3
2.718
CoolSiC™+
Silicon Carbide Schottky
600V
3A (DC)
2.3V @ 3A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDP15E60XKSA1
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO220
4.356
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDB15E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263
8.028
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-40°C ~ 175°C
IDDD04G65C6XTMA1
Infineon Technologies
SIC DIODES
5.202
CoolSiC™+
Silicon Carbide Schottky
650V
13A (DC)
-
No Recovery Time > 500mA (Io)
0ns
14µA @ 420V
205pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
IDK04G65C5XTMA2
Infineon Technologies
DIODE SCHOTTKY 650V 4A TO263-2
3.096
CoolSiC™+
Silicon Carbide Schottky
650V
4A (DC)
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
670µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDL04G65C5XUMA2
Infineon Technologies
DIODE SCHOTTKY 650V 4A VSON-4
3.546
CoolSiC™+
Silicon Carbide Schottky
650V
4A (DC)
1.7V @ 4A
No Recovery Time > 500mA (Io)
0ns
70µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
IDV15E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 15A TO220-2
8.028
-
Standard
650V
15A
2.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
47ns
40µA @ 650V
-
Through Hole
TO-220-2
TO-220-2
-40°C ~ 175°C
IDP20E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 40A TO220-2
6.318
-
Standard
650V
40A (DC)
2.2V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
IDP12E120XKSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 28A TO220-2
4.698
-
Standard
1200V
28A (DC)
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
IDH03SG60CXKSA2
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO220-2
7.974
CoolSiC™+
Silicon Carbide Schottky
600V
3A (DC)
2.3V @ 3A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
IDD04SG60CXTMA2
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO252-3
6.714
CoolSiC™+
Silicon Carbide Schottky
600V
4A (DC)
2.3V @ 4A
No Recovery Time > 500mA (Io)
0ns
25µA @ 600V
80pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
SIDC06D120H8X1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 7.5A WAFER
8.226
-
Standard
1200V
7.5A (DC)
1.97V @ 7.5A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDK05G65C5XTMA2
Infineon Technologies
DIODE SCHOTTKY 650V 5A TO263-2
3.508
CoolSiC™+
Silicon Carbide Schottky
650V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
830µA @ 650V
160pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDP30E65D2XKSA1
Infineon Technologies
DIODE GEN PURP 650V 60A TO220-2
6.444
-
Standard
650V
60A (DC)
2.2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
40µA @ 650V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
IDB30E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 52.3A TO263
8.046
-
Standard
600V
52.3A (DC)
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
126ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-40°C ~ 175°C
IDP18E120XKSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 31A TO220-2
7.974
-
Standard
1200V
31A (DC)
2.15V @ 18A
Fast Recovery =< 500ns, > 200mA (Io)
195ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
IDP1301GXUMA1
Infineon Technologies
DIODE GEN PURP DSO-19
3.562
*
-
-
-
-
-
-
-
-
-
-
-
-
IDL06G65C5XUMA2
Infineon Technologies
DIODE SCHOTTKY 650V 6A VSON-4
6.912
CoolSiC™+
Silicon Carbide Schottky
650V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
110µA @ 650V
190pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDDD06G65C6XTMA1
Infineon Technologies
SIC DIODES
5.166
CoolSiC™+
Silicon Carbide Schottky
650V
18A (DC)
-
No Recovery Time > 500mA (Io)
0ns
20µA @ 420V
302pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
IDP30E60XKSA1
Infineon Technologies
DIODE GEN PURP 600V 52.3A TO220
6.822
-
Standard
600V
52.3A (DC)
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
126ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDK06G65C5XTMA2
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO263-2
7.560
CoolSiC™+
Silicon Carbide Schottky
650V
6A (DC)
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
1.1mA @ 650V
190pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDC08D120T6MX1SA2
Infineon Technologies
DIODE GEN PURP 1.2KV 10A WAFER
4.968
-
Standard
1200V
10A
2.05V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
2.7µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDD05SG60CXTMA2
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO252-3
7.182
CoolSiC™+
Silicon Carbide Schottky
600V
5A (DC)
2.3V @ 5A
No Recovery Time > 500mA (Io)
0ns
30µA @ 600V
110pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDH05G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 5A TO220-2
8.136
CoolSiC™+
Silicon Carbide Schottky
650V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
90µA @ 650V
160pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
GLHUELSE1626XPSA1
Infineon Technologies
DUMMY 57
6.534
-
-
-
-
-
-
-
-
-
-
-
-
-