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Infineon Technologies Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 19/24
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
IDK02G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 2A TO263-2
2.628
CoolSiC™+
Silicon Carbide Schottky
650V
2A (DC)
1.8V @ 2A
No Recovery Time > 500mA (Io)
0ns
330µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK03G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 3A TO263-2
8.478
CoolSiC™+
Silicon Carbide Schottky
650V
3A (DC)
1.8V @ 3A
No Recovery Time > 500mA (Io)
0ns
500µA @ 650V
100pF @ 1V, 1MHz
Surface Mount
TO-262
PG-TO263-2
-55°C ~ 175°C
IDK04G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 4A TO263-2
6.678
CoolSiC™+
Silicon Carbide Schottky
650V
4A (DC)
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
670µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK05G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 5A TO263-2
2.214
CoolSiC™+
Silicon Carbide Schottky
650V
5A (DC)
1.8V @ 5A
No Recovery Time > 500mA (Io)
0ns
830µA @ 650V
160pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK06G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO263-2
7.380
CoolSiC™+
Silicon Carbide Schottky
650V
6A (DC)
1.8V @ 6A
No Recovery Time > 500mA (Io)
0ns
1.1mA @ 650V
190pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK08G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 8A TO263-2
5.022
CoolSiC™+
Silicon Carbide Schottky
650V
8A (DC)
1.8V @ 8A
No Recovery Time > 500mA (Io)
0ns
1.4mA @ 650V
250pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK09G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 9A TO263-2
3.024
CoolSiC™+
Silicon Carbide Schottky
650V
9A (DC)
1.8V @ 9A
No Recovery Time > 500mA (Io)
0ns
1.6mA @ 650V
270pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK10G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO263-2
2.070
CoolSiC™+
Silicon Carbide Schottky
650V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
1.7mA @ 650V
300pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDK12G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 12A TO263-2
126
CoolSiC™+
Silicon Carbide Schottky
650V
12A (DC)
1.8V @ 12A
No Recovery Time > 500mA (Io)
0ns
2.1mA @ 650V
360pF @ 1V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-2
-55°C ~ 175°C
IDL02G65C5XUMA1
Infineon Technologies
DIODE SCHOTTKY 650V 2A VSON-4
5.220
CoolSiC™+
Silicon Carbide Schottky
650V
2A (DC)
1.7V @ 2A
No Recovery Time > 500mA (Io)
0ns
35µA @ 650V
70pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
IDL04G65C5XUMA1
Infineon Technologies
DIODE SCHOTTKY 650V 4A VSON-4
2.718
CoolSiC™+
Silicon Carbide Schottky
650V
4A (DC)
1.7V @ 4A
No Recovery Time > 500mA (Io)
0ns
70µA @ 650V
130pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 175°C
IDL06G65C5XUMA1
Infineon Technologies
DIODE SCHOTTKY 650V 6A VSON-4
8.676
CoolSiC™+
Silicon Carbide Schottky
650V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
110µA @ 650V
190pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDL08G65C5XUMA1
Infineon Technologies
DIODE SCHOTTKY 650V 8A VSON-4
7.578
CoolSiC™+
Silicon Carbide Schottky
650V
8A (DC)
1.7V @ 8A
No Recovery Time > 500mA (Io)
0ns
140µA @ 650V
250pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDL10G65C5XUMA1
Infineon Technologies
DIODE SCHOTTKY 650V 10A VSON-4
2.034
CoolSiC™+
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 650V
300pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IDL12G65C5XUMA1
Infineon Technologies
DIODE SCHOTTKY 650V 12A VSON-4
3.474
CoolSiC™+
Silicon Carbide Schottky
650V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
190µA @ 650V
360pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
IRD3CH101DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 200A DIE
7.542
-
Standard
1200V
200A
2.7V @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
360ns
3.6µA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IRD3CH101DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
7.686
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH101DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
4.230
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH11DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 25A DIE
4.554
-
Standard
1200V
25A
2.7V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
700nA @ 1200V
-
Surface Mount
Die
Die
-40°C ~ 150°C
IRD3CH11DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
2.664
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH11DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
5.688
-
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH16DB6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
8.874
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH16DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
8.568
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH16DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
2.520
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH24DB6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
5.832
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH24DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
7.866
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH24DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
4.590
-
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH31DB6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
7.398
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH31DD6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
7.344
*
-
-
-
-
-
-
-
-
-
-
-
-
IRD3CH31DF6
Infineon Technologies
DIODE CHIP EMITTER CONTROLLED
2.358
-
-
-
-
-
-
-
-
-
-
-
-
-