SISS10DN-T1-GE3 Datasheet
SISS10DN-T1-GE3 Datasheet
Totale pagine: 9
Dimensioni: 325,31 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SISS10DN-T1-GE3
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Produttore Vishay Siliconix Serie TrenchFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 40V Corrente - Scarico continuo (Id) @ 25 ° C 60A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (massimo) +20V, -16V Capacità di ingresso (Ciss) (Max) @ Vds 3750pF @ 20V Funzione FET - Dissipazione di potenza (max) 57W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore PowerPAK® 1212-8S (3.3x3.3) Pacchetto / Custodia PowerPAK® 1212-8S |