SIRA26DP-T1-RE3 Datasheet
SIRA26DP-T1-RE3 Datasheet
Totale pagine: 9
Dimensioni: 251,26 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SIRA26DP-T1-RE3
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Produttore Vishay Siliconix Serie TrenchFET® Gen IV Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 25V Corrente - Scarico continuo (Id) @ 25 ° C 60A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (massimo) +16V, -12V Capacità di ingresso (Ciss) (Max) @ Vds 2247pF @ 10V Funzione FET - Dissipazione di potenza (max) 43.1W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore PowerPAK® SO-8 Pacchetto / Custodia PowerPAK® SO-8 |