SIHG64N65E-GE3 Datasheet
SIHG64N65E-GE3 Datasheet
Totale pagine: 9
Dimensioni: 198,12 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SIHG64N65E-GE3
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Produttore Vishay Siliconix Serie - Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 650V Corrente - Scarico continuo (Id) @ 25 ° C 64A (Tc) Tensione inverter (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 47mOhm @ 32A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 369nC @ 10V Vgs (massimo) ±30V Capacità di ingresso (Ciss) (Max) @ Vds 7497pF @ 100V Funzione FET - Dissipazione di potenza (max) 520W (Tc) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore TO-247AC Pacchetto / Custodia TO-247-3 |